IRF7854TRPBF vs IRFH5300TRPBF 비교
다음의 상세 나란히 비교: IRF7854TRPBF 제조: Infineon 및 IRFH5300TRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRF7854TRPBF | IRFH5300TRPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.48 | $0.45 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | 30 V |
| Continuous Drain Current (ID) at Ta=25°C | 10 A | — |
| Power Dissipation (PD) at Ta=25°C | 2.5 W | — |
| On-Resistance RDS(on) max at VGS=10V | 13.4 mΩ | 1.4 mOhm |
| Gate-Source Threshold Voltage VGS(th) max | 4.9 V | — |
| Total Gate Charge Qg | 27 nC | — |
| 패키지 | SO-8 | PQFN-8 (5x6 mm) |
| 실장 유형 | Surface Mount | Surface Mount |
| Technology | HEXFET (planar N-channel) | HEXFET (StrongIRFET) |
| 동작 온도 범위 | -55°C to +150°C (TJ) | -55C to +150C |
| Lead-Free / RoHS | Yes (PBF suffix, lead-free) | — |
| Qualification | JEDEC industrial, Normal level | — |
| Solder Process | Reflow and wave-solderable | — |
| Gate Drive Voltage (recommended) | 10 V | — |
| Polarity | — | N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 40 A |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | 336 A |
| On-Resistance RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Total Gate Charge (Qg) | — | 50 nC |
| Power Dissition at TA=25C | — | 3.6 W |
| Power Dissipation at TC=25C | — | 250 W |
| Gate Drive Level | — | Logic-level (5V optimized) |
| JEDEC Qualification | — | Yes |
| RoHS 상태 | — | Compliant |