IRF9952TRPBF vs IRF7313TRPBF 비교

다음의 상세 나란히 비교: IRF9952TRPBF 제조: Infineon 및 IRF7313TRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRF9952TRPBF IRF7313TRPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.32 $0.27
Polarity / Configuration Complementary N-Channel + P-Channel, dual MOSFET array —
N-Channel VDS (Drain-Source Voltage) 30 V —
P-Channel VDS (Drain-Source Voltage) -30 V —
N-Channel Continuous Drain Current (ID) 3.5 A —
P-Channel Continuous Drain Current (ID) 2.3 A —
N-Channel R_DS(on) max 0.10 ohm (at VGS = 10 V) —
P-Channel R_DS(on) max 0.25 ohm (at VGS = -10 V) —
Total Package Power Dissipation (PD) 2 W —
Technology IR MOSFET / Fifth Generation HEXFET IR MOSFET Generation V (HEXFET Fifth Generation)
패키지 8-pin SOIC (SO-8), surface mount 8-pin SOIC (SO-8) surface mount
실장 유형 Surface Mount Surface Mount
동작 온도 범위 -55C to +150C (junction) -55C to +150C (junction)
RoHS 상태 Compliant (Pb-free, indicated by PBF suffix) —
Tape and Reel Packaging Yes (TRPBF suffix) —
Qualification Consumer market —
Manufacturer — Infineon (formerly International Rectifier)
Part Number — IRF7313TRPBF
Transistor Configuration — Dual N-Channel (Independent)
Drain-Source Voltage (VDS) max — 30 V
Continuous Drain Current (ID) max — 6.5 A per channel
On-Resistance (RDS(on)) max — 29 mOhm at VGS=10V
Power Dissipation (PD) max — 2 W
Gate-Source Voltage (VGS) max — [DATA_NEEDED: ±V rating]
Gate Threshold Voltage (VGS(th)) — 1.0 V to 2.5 V (typical range)
Lead-Free / Pbf — Yes (lead-free plating)
Avalanche Rated — Yes
MSL 레벨 — 1
Qualification Standard — Consumer market (per IR datasheet)
Shipping Media — Tape & Reel (TRPBF suffix)

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