IRFR1205TRPBF vs IRLR2705TRPBF 비교

다음의 상세 나란히 비교: IRFR1205TRPBF 제조: Infineon 및 IRLR2705TRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRFR1205TRPBF IRLR2705TRPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.49 $0.36
FET Type N-Channel N-Channel MOSFET, Metal Oxide
Technology HEXFET (IR MOSFET, 5th generation) HEXFET (IR MOSFET generation 5)
Drain-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at TC=25C 44 A —
Pulsed Drain Current (IDM) 160 A —
Gate-Source Voltage (VGS) max +/- 20 V —
Gate Threshold Voltage (VGS(th)) 2 V min, 4 V max Logic-Level (compatible with 4V drive)
On-Resistance RDS(on) at VGS=10V 27 mOhm max —
Total Gate Charge (Qg) 43.3 nC 16.7 nC
Power Dissition (PD) at TC=25C 107 W —
동작 접합 온도 -55C to +175C -55C to +175C
패키지 TO-252AA (DPAK) TO-252AA (DPAK)
실장 유형 Surface Mount Surface Mount
RoHS 상태 Compliant (PBF suffix = lead-free) —
Lead-Free / Halogen-Free Yes / [DATA_NEEDED: halogen status] —
Drain-to-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at Tc=25C — 28 A
Continuous Drain Current (ID) at TA=25C — [DATA_NEEDED: ID at TA=25C with 1in2 copper]
RDS(on) Max at VGS=10V — 40 mOhm
RDS(on) Max at VGS=5V — [DATA_NEEDED: RDS(on) at VGS=5V]
Gate-to-Source Voltage (VGS) Max — [DATA_NEEDED: VGS absolute max, +/-V]
Power Dissipation (PD) at Tc=25C — 68 W
Power Dissipation (PD) at TA=25C — [DATA_NEEDED: PD at TA=25C with 1in2 copper]
Avalanche Rated — Yes
Lead-Free / RoHS — Yes (Pb-free, RoHS compliant)
MSL 레벨 — [DATA_NEEDED: MSL rating per JEDEC J-STD-020]

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