IRFR3710ZTRLPBF vs BSS123NH6327XTSA1 비교

다음의 상세 나란히 비교: IRFR3710ZTRLPBF 제조: Infineon 및 BSS123NH6327XTSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
BSS123NH6327XTSA1 BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 - 100V N-Ch MOSFET, 190mA | Infineon

BSS123NH6327XTSA1 ✓ 활성

사양 비교

파라미터 IRFR3710ZTRLPBF BSS123NH6327XTSA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.58 $0.09
FET Type N-Channel N-Channel, Enhancement Mode
Technology MOSFET (Metal Oxide), HEXFET —
Drain to Source Voltage (Vdss) 100 V —
Continuous Drain Current (Id) @ 25C (Tc) 42 A —
Max Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
RDS(on) max @ VGS=10V 18 mOhm —
Gate-Source Voltage (Vgs) max [DATA_NEEDED: Vgs max rating] —
Gate Threshold Voltage (Vgs(th) typ) [DATA_NEEDED: Vgs(th)] —
Total Gate Charge (Qg) 69 nC —
Power Dissipation (Pd) @ Tc=25C 140 W —
Avalanche Energy Rating (EAS) 150 mJ —
Maximum Junction Temperature 175 C —
패키지 TO-252AA (DPAK), 3-pin (2+tab) PG-SOT23 (SOT-23-3)
실장 유형 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 (per Lisleapex listing) —
Configuration Single with built-in diode —
동작 온도 -55 C to +175 C (TJ) —
RoHS 상태 Compliant (Pb-free PBF suffix) —
Manufacturer — Infineon Technologies
Part Number — BSS123NH6327XTSA1
Part Status — Active
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) — 190 mA (Ta)
Power Dissipation (PD) — 500 mW (Ta)
RDS(on) Max — 6 Ω @ VGS = 10 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical and max VGS(th)]
Gate-Source Voltage Max (VGS) — ±20 V
동작 온도 범위 — -55 °C to +150 °C (junction)
Qualification — AEC-Q101 (automotive)
RoHS Compliance — Yes (Pb-free lead plating)
MSL 레벨 — 1 (per JEDEC J-STD-020)

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