IRFR3710ZTRPBF vs IRF540ZPBF 비교
다음의 상세 나란히 비교: IRFR3710ZTRPBF 제조: Infineon 및 IRF540ZPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRFR3710ZTRPBF | IRF540ZPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.42 | $0.62 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25C | 56 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM] | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | 18 mOhm | — |
| Power Dissipation (PD) at TC=25C | 140 W | — |
| 동작 접합 온도 | -55C to +175C | — |
| Technology | HEXFET (IR MOSFET) | HEXFET Power MOSFET (N-Channel DMOS) |
| 패키지 | TO-252AA (DPAK) | TO-220AB (through-hole, 3-lead) |
| 실장 유형 | Surface Mount | Through Hole |
| RoHS 상태 | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRF540ZPBF |
| Drain-Source Voltage (V_DS) | — | 100 V |
| Continuous Drain Current (I_D) at T_C=25C | — | 36 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (V_GS) max | — | [DATA_NEEDED: V_GS maximum rating] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical] |
| On-Resistance R_DS(on) max at V_GS=10V | — | 26.5 mOhm |
| Total Gate Charge (Q_g) | — | 42 nC |
| Power Dissipation (P_D) at T_C=25C | — | 92 W |
| Maximum Junction Temperature | — | 175 C |
| 동작 접합 온도 범위 | — | -55 C to +175 C |
| 핀 수 | — | 3 (Gate, Drain, Source) |
| Automotive Qualified | — | Yes (per datasheet description) |