IRFR5305TRLPBF vs IRF5305STRLPBF 비교
다음의 상세 나란히 비교: IRFR5305TRLPBF 제조: Infineon 및 IRF5305STRLPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRFR5305TRLPBF | IRF5305STRLPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.38 | $0.92 |
| Polarity / Channel Type | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -55 V | -55 V |
| Continuous Drain Current (ID) at Tc=25C | -31 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| RDS(on) max at VGS=-10V | 65 mΩ | 60 mOhm |
| RDS(on) max at VGS=-5V | [DATA_NEEDED: RDS(on) at VGS=-5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) range] | — |
| Power Dissipation (PD) at Tc=25C | 110 W | — |
| 동작 접합 온도 | -55C to +175C | — |
| 패키지 | TO-252AA (DPAK), surface mount | TO-263 / D2PAK (surface mount) |
| 실장 유형 | Surface Mount | Surface Mount |
| Technology | HEXFET fifth-generation planar MOSFET | HEXFET (fifth generation), IR MOSFET |
| Avalanche Rated | Yes (fully avalanche rated) | — |
| Lead-Free / RoHS | Yes (Pb-free, suffix "PBF") | Yes (Pb-free suffix PBF) |
| Tape & Reel Orientation | Left orientation (TRLPBF = Tape & Reel, Left) | — |
| Continuous Drain Current (ID) at TC=25C | — | -31 A |
| Continuous Drain Current (ID) at TA=25C | — | [DATA_NEEDED: ID at TA=25C] |
| RDS(on) max at VGS=-4.5V | — | [DATA_NEEDED: RDS(on) at VGS=-4.5V] |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typ] |
| Total Gate Charge (Qg) | — | 42 nC (Mouser listing) / 63 nC (Future Electronics listing) |
| Maximum Power Dissition at Tc | — | 110 W |
| Maximum Power Dissipation at TA | — | 3.8 W |
| 동작 온도 범위 | — | [DATA_NEEDED: Tj max / operating range] |
| Packaging | — | Tape & Reel (TR), 800 pcs per reel |