IRFR540ZTRLPBF vs IRFR540ZTRPBF 비교

다음의 상세 나란히 비교: IRFR540ZTRLPBF 제조: Infineon 및 IRFR540ZTRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IRFR540ZTRLPBF IRFR540ZTRLPBF - 100V 35A N-Channel MOSFET | Infineon

IRFR540ZTRLPBF - 100V 35A N-Channel MOSFET | Infineon

IRFR540ZTRLPBF ✓ 활성
Infineon
IRFR540ZTRPBF IRFR540ZTRPBF - 100V N-Ch MOSFET, 35A, DPAK | Infineon

IRFR540ZTRPBF - 100V N-Ch MOSFET, 35A, DPAK | Infineon

IRFR540ZTRPBF ✓ 활성

사양 비교

파라미터 IRFR540ZTRLPBF IRFR540ZTRPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.82 $0.32
FET Type N-Channel —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC 35 A —
Pulsed Drain Current (IDM) 110 A —
Static Drain-Source On-Resistance (RDS(on)) 28.5 mΩ max at VGS=10V —
Gate-Source Voltage (VGS) max [DATA_NEEDED: ±V rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical V] —
Total Gate Charge (Qg) 39 nC 39 nC
Power Dissipation (PD) at TC 91 W —
동작 접합 온도 -55 °C to +175 °C —
Technology IR MOSFET™ / HEXFET® IR MOSFET
패키지 TO-252AA (DPAK) surface mount TO-252AA (DPAK) surface mount
실장 유형 Surface Mount Surface Mount
핀 수 3 (Gate, Drain, Source) 3 (Gate, Drain, Source)
Automotive Qualification AEC-Q101 qualified —
Lead-Free / RoHS Yes (PBF suffix) —
Packaging Tape & Reel (TR-L), 800-piece leader/trailer —
트랜지스터 유형 — N-Channel MOSFET
Drain-Source Voltage (Vds) — 100 V
Continuous Drain Current (Id) — 35 A (at Tc)
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current]
On-Resistance Rds(on) Max — 28.5 mOhm at Vgs=10V
Gate-Source Threshold Vgs(th) — [DATA_NEEDED: Vgs(th) typical value]
Power Dissipation (Pd) — 91 W (at Tc)
동작 온도 범위 — -55 C to +175 C (junction)
MSL 레벨 — 1 (unlimited floor life at <30 C / 85% RH)
RoHS 상태 — Compliant
Lead-Free / Halogen-Free — Yes / Yes
Automotive Qualified — Yes (AEC-Q101)

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