IRFR6215TRLPBF vs IRFR3710ZTRLPBF 비교

다음의 상세 나란히 비교: IRFR6215TRLPBF 제조: Infineon 및 IRFR3710ZTRLPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRFR6215TRLPBF IRFR3710ZTRLPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.38 $0.58
Polarity P-Channel —
Drain-Source Voltage (VDS) -150 V —
Continuous Drain Current (ID) at Tc=25C -13 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] —
Gate-Source Voltage (VGS) max ±20 V —
RDS(on) max at VGS=-10V 580 mOhm —
Total Gate Charge (Qg) typ 44 nC —
Power Dissipation (PD) at Tc=25C 110 W —
Maximum Operating Junction Temperature 175 C —
패키지 TO-252AA (DPAK) TO-252AA (DPAK), 3-pin (2+tab)
실장 유형 Surface Mount Surface Mount
Technology HEXFET Power MOSFET (Fifth Generation) MOSFET (Metal Oxide), HEXFET
MSL 레벨 1 —
RoHS 상태 Compliant Compliant (Pb-free PBF suffix)
Lead-Free Yes —
FET Type — N-Channel
Drain to Source Voltage (Vdss) — 100 V
Continuous Drain Current (Id) @ 25C (Tc) — 42 A
Max Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current]
RDS(on) max @ VGS=10V — 18 mOhm
Gate-Source Voltage (Vgs) max — [DATA_NEEDED: Vgs max rating]
Gate Threshold Voltage (Vgs(th) typ) — [DATA_NEEDED: Vgs(th)]
Total Gate Charge (Qg) — 69 nC
Power Dissipation (Pd) @ Tc=25C — 140 W
Avalanche Energy Rating (EAS) — 150 mJ
Maximum Junction Temperature — 175 C
Automotive Qualification — AEC-Q101 (per Lisleapex listing)
Configuration — Single with built-in diode
동작 온도 — -55 C to +175 C (TJ)

데이터시트 & 자료

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