IRFZ34NPBF vs IRFP2907PBF 비교

다음의 상세 나란히 비교: IRFZ34NPBF 제조: Infineon 및 IRFP2907PBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRFZ34NPBF IRFP2907PBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.61 $2.45
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Part Status Active —
FET Type N-Channel, Enhancement Mode —
Technology HEXFET (Planar DMOS, 5th generation) HEXFET Stripe Planar DMOS (N-Channel)
Drain-Source Voltage (V_DSS) 55 V —
Continuous Drain Current (I_D) at Tc=25C 29 A —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (P_D) at Tc=25C 68 W —
On-Resistance R_DS(on) max at V_GS=10V 40 mOhm —
Gate Charge (Q_g) typ 22.7 nC —
Gate Threshold Voltage V_GS(th) typ [DATA_NEEDED: gate threshold voltage] —
Input Capacitance (C_iss) typ [DATA_NEEDED: input capacitance] —
동작 온도 범위 -55 C to +175 C —
Maximum Junction Temperature 175 C —
패키지 TO-220AB (3-pin + tab, through-hole) —
실장 유형 Through Hole —
Lead-Free Status Yes (Pb-free, RoHS compliant) —
Qualification JEDEC standard —
RoHS 상태 Compliant —
Configuration Single N-Channel, 3-pin (3+tab) —
Part Number — IRFP2907PBF
Drain-to-Source Voltage (V_DSS) — 75 V
Continuous Drain Current (I_D) at T_C = 25 C — 209 A
Static Drain-to-Source On-Resistance (R_DS(on)) — 4.5 mOhm at V_GS = 10 V
Power Dissipation (P_D) at T_C = 25 C — 470 W
Total Gate Charge (Q_g) — 410 nC
Maximum Junction Operating Temperature — +175 C
Package / Mounting Type — TO-247AC (Through Hole)
핀 수 — 3 (Gate, Drain, Source)
RoHS Compliance — Yes (Pb-free)
Avalanche Rated — Yes (repetitive avalanche rated)
Body Diode — Integral (no external anti-parallel diode required)
Lead-Free — Yes

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