IRLR8726TRLPBF vs BSC011N03LSIATMA1 비교

다음의 상세 나란히 비교: IRLR8726TRLPBF 제조: Infineon 및 BSC011N03LSIATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRLR8726TRLPBF BSC011N03LSIATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.36 $1.32
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) Max 30 V —
Continuous Drain Current (ID) at TC=25C 86 A —
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed IDM value]
On-Resistance RDS(on) Max at VGS=10V 5.8 mOhm —
On-Resistance RDS(on) at VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Gate-Source Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge (Qg) 15 nC —
Gate-Drain Charge (Qgd) [DATA_NEEDED: Qgd] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: Coss] —
Maximum Power Dissipation (PD) at TC=25C 75 W —
동작 접합 온도 -55C to +175C -55 °C to +150 °C
패키지 TO-252AA (DPAK) PG-TDSON-8-7 (Surface Mount)
실장 유형 Surface Mount Surface Mount
Technology Family StrongIRFET —
RoHS Compliance ROHS3 Compliant —
Lead-Free Yes (PBF suffix) —
MSL 레벨 1 (per JEDEC J-STD-020, inferred from PBF suffix and DPAK packaging) 1 (per JEDEC J-STD-020)
Manufacturer — Infineon Technologies
Product Family — OptiMOS™ 30 V
Channel Type — N-Channel
Drain-to-Source Voltage (VDS) — 30 V
Gate-to-Source Voltage (VGS) — ±20 V
Continuous Drain Current (ID) at TA=25°C — 37 A
Continuous Drain Current (ID) at TC=25°C — 100 A
On-State Resistance RDS(on) at VGS=10V — 1.1 mΩ (typical)
Power Dissipation at TA=25°C — 2.5 W
Power Dissipation at TC=25°C — 96 W
RoHS 상태 — Compliant

데이터시트 & 자료

모든 제품 보기 BOM 생성 견적 요청