IRLU024NPBF vs IRF9Z34NPBF 비교

다음의 상세 나란히 비교: IRLU024NPBF 제조: Infineon 및 IRF9Z34NPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRLU024NPBF IRF9Z34NPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.61 $0.65
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Part Number IRLU024NPBF —
FET Type N-Channel, Logic-Level —
Technology HEXFET Power MOSFET (5th generation) HEXFET (5th generation)
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at TC=25C 17 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-Resistance RDS(on) max at VGS=10V 65 mOhm —
On-Resistance RDS(on) max at VGS=5V [DATA_NEEDED: RDS(on) at VGS=5V] —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) min/typ/max] —
Total Gate Charge (Qg) 10 nC (typical, per listing) —
Power Dissipation (PD) at TC=25C 45 W —
Thermal Resistance Junction-to-Case (RthJC) 3.3 C/W —
Thermal Resistance Junction-to-Ambient (RthJA) 110 C/W (50 C/W PCB-mounted) —
동작 접합 온도 -55C to +175C —
패키지 IPAK (TO-251AA), Through Hole TO-220AB (through-hole, 3-pin)
실장 유형 Through Hole Through Hole
Lead-Free / RoHS Yes (PBF suffix indicates lead-free plating) —
Qualification JEDEC standard —
Gate Drive Voltage (optimized) 10 V (capable of 4.5 V) —
Polarity / Channel Type — P-Channel
Drain-Source Voltage (Vds) — -55 V
Continuous Drain Current (Id) at Tc=25C — -19 A
Pulsed Drain Current (Idm) — -72 A
Power Dissipation (Pd) at Tc=25C — 68 W
On-Resistance Rds(on) at Vgs=-10V — 100 milliohm (typical)
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) typical/min/max]
Gate Charge (Qg) — 23.3 nC (per Mouser listing)
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
동작 온도 범위 — -55C to +175C (junction)
Pinout (G-D-S) — Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source
Lead-Free / Halogen-Free — Yes (PBF suffix)
RoHS 상태 — Compliant

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