IRLU024NPBF vs IRFR9024NTRPBF 비교
다음의 상세 나란히 비교: IRLU024NPBF 제조: Infineon 및 IRFR9024NTRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRLU024NPBF | IRFR9024NTRPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.61 | $0.17 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRLU024NPBF | — |
| FET Type | N-Channel, Logic-Level | — |
| Technology | HEXFET Power MOSFET (5th generation) | HEXFET (Gen 5) |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at TC=25C | 17 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-Resistance RDS(on) max at VGS=10V | 65 mOhm | — |
| On-Resistance RDS(on) max at VGS=5V | [DATA_NEEDED: RDS(on) at VGS=5V] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) min/typ/max] | — |
| Total Gate Charge (Qg) | 10 nC (typical, per listing) | 12.7 nC |
| Power Dissipation (PD) at TC=25C | 45 W | — |
| Thermal Resistance Junction-to-Case (RthJC) | 3.3 C/W | — |
| Thermal Resistance Junction-to-Ambient (RthJA) | 110 C/W (50 C/W PCB-mounted) | — |
| 동작 접합 온도 | -55C to +175C | -55C to +175C |
| 패키지 | IPAK (TO-251AA), Through Hole | TO-252AA (DPAK) |
| 실장 유형 | Through Hole | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix indicates lead-free plating) | — |
| Qualification | JEDEC standard | — |
| Gate Drive Voltage (optimized) | 10 V (capable of 4.5 V) | — |
| Polarity | — | P-Channel |
| VDS (Drain-Source Voltage) | — | -55 V |
| Continuous Drain Current (Tc=25C) | — | -11 A |
| 펄스 드레인 전류 | — | [DATA_NEEDED: pulsed drain current] |
| VGS (Gate-Source Voltage) | — | ±20 V |
| VGS(th) (Threshold Voltage) | — | [DATA_NEEDED: VGS(th) typical] |
| RDS(on) Max at VGS=-10V | — | 175 mOhm |
| Maximum Power Dissipation (Tc=25C) | — | 38 W |
| 핀 수 | — | 3 |
| RoHS 상태 | — | Compliant |