IRS2011STRPBF vs IRS2008STRPBF 비교

다음의 상세 나란히 비교: IRS2011STRPBF 제조: Infineon 및 IRS2008STRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRS2011STRPBF IRS2008STRPBF
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.55 $0.33
기능 Half-Bridge Gate Driver Half-Bridge Gate Driver
Configuration High-Side and Low-Side, Independent Channels —
출력 수 2 2 (high-side + low-side)
Maximum Offset Voltage (High-Side) 200 V —
Output Current (Source / Sink) 1 A typical / 1 A typical —
Propagation Delay (ton/toff) 60 ns typical —
Delay Matching 20 ns maximum —
Logic Input Compatibility 3.3 V CMOS / LSTTL TTL/CMOS
Bootstrap Supply Integrated bootstrap diode, floating channel —
Supply Voltage (VCC) 10 V to 20 V —
Negative Transient Tolerance Yes, dV/dt immune —
패키지 8-SOIC (DSO-8) 8-SOIC (SOIC N), 3.90 mm body width
동작 온도 -40 C to +125 C -40 C to +125 C (industrial)
실장 유형 Surface Mount Surface Mount (Tape & Reel)
RoHS 상태 Compliant (PBF suffix) Compliant
Suitable Drivers MOSFETs and IGBTs —
Manufacturer — Infineon Technologies
Part Number — IRS2008STRPBF
Driven Configuration — Half-Bridge (High-Side + Low-Side, synchronous)
Channel Type — Synchronous (independent inputs)
출력 유형 — Non-Inverting
Input Voltage (VCC) — 10 V to 20 V (per datasheet family)
Maximum Offset Voltage (Voffset) — 200 V
Source Current (typ.) — 0.29 A
Sink Current (typ.) — 0.6 A
Rise Time (typ.) — [DATA_NEEDED: rise time ns]
Fall Time (typ.) — [DATA_NEEDED: fall time ns]
Propagation Delay (typ.) — [DATA_NEEDED: propagation delay ns]
VCC UVLO Threshold — Yes (per datasheet family)
VBS UVLO Threshold — Yes (per datasheet family)
Shutdown Pin (SD) — Yes (active logic-level shutdown)
Lead Finish — Matte Tin (lead-free)
MSL 레벨 — [DATA_NEEDED: MSL rating]

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