IRS2181STRPBF vs IRS2011STRPBF 비교

다음의 상세 나란히 비교: IRS2181STRPBF 제조: Infineon 및 IRS2011STRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRS2181STRPBF IRS2011STRPBF
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.62 $1.55
기능 Half-Bridge Gate Driver Half-Bridge Gate Driver
Configuration High-side and low-side referenced, non-inverting High-Side and Low-Side, Independent Channels
출력 수 2 (HO, LO) 2
Offset Voltage (max) 600 V —
VCC Supply Voltage 10 V to 20 V —
VBS Bootstrap Supply Voltage 10 V to 20 V (referenced to VS) —
Output Source Current (typ) 1.9 A —
Output Sink Current (typ) 2.3 A —
Rise / Fall Time (typ) [DATA_NEEDED: typical rise/fall time with 1000 pF load] —
Propagation Delay (typ) [DATA_NEEDED: t_on / t_off matching] —
Logic Input Compatibility 3.3 V and 5 V logic 3.3 V CMOS / LSTTL
Under-Voltage Lockout (UVLO) Present on VCC and VBS —
Shutdown Pin (SD) Yes, active-low compatible input stage —
동작 온도 범위 -40 C to +125 C (junction) —
패키지 8-pin SOIC (SO-8, 0.154" / 3.90 mm body width) 8-SOIC (DSO-8)
실장 유형 Surface Mount Surface Mount
Lead Finish Pb-free (PBF suffix) —
MSL 레벨 MSL 2 / 3 (per JEDEC J-STD-020, [DATA_NEEDED: exact MSL floor-life]) —
RoHS Compliance Compliant (Pb-free) —
Maximum Offset Voltage (High-Side) — 200 V
Output Current (Source / Sink) — 1 A typical / 1 A typical
Propagation Delay (ton/toff) — 60 ns typical
Delay Matching — 20 ns maximum
Bootstrap Supply — Integrated bootstrap diode, floating channel
Supply Voltage (VCC) — 10 V to 20 V
Negative Transient Tolerance — Yes, dV/dt immune
동작 온도 — -40 C to +125 C
RoHS 상태 — Compliant (PBF suffix)
Suitable Drivers — MOSFETs and IGBTs

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