IRS21867STRPBF vs IR2104STRPBF 비교

다음의 상세 나란히 비교: IRS21867STRPBF 제조: Infineon 및 IR2104STRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRS21867STRPBF IR2104STRPBF
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.55 $0.59
토폴로지 High-Side and Low-Side (Half-Bridge) —
Offset Voltage (High-Side, max) 600 V —
Output Current (Source/Sink, typical) 4 A / 4 A —
Supply Voltage VCC 10 V to 20 V —
Bootstrap Supply VBS up to VCC + 600 V (floating) —
Input Logic Compatibility 3.3 V and 5 V CMOS / TTL 3.3 V, 5 V, 15 V logic
Rise Time (typ, 1 nF load) 22 ns —
Fall Time (typ, 1 nF load) 18 ns —
Turn-On Propagation Delay (typ) 170 ns 150 ns
Turn-Off Propagation Delay (typ) 170 ns 130 ns
Undervoltage Lockout Yes (VCC and VBS) Yes (VCC and VBS)
Operating Temperature Range (TJ) -40C to +150C —
패키지 8-SOIC (SOIC-8, 8-pin SOIC N T/R) 8-SOIC (SOIC-8)
실장 유형 Surface Mount Surface Mount
MSL 레벨 2 —
RoHS 상태 Compliant Compliant
Lead-Free Status Lead Free —
Channel Count 2 (1 high-side + 1 low-side) —
Input Type Non-Inverting (HIN, LIN) —
Product Type — Half-Bridge Gate Driver IC
Configuration — High-side and low-side referenced output channels
출력 수 — 2 (high-side + low-side)
Offset Voltage (High-Side, Max) — 600 V
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Output Source Current (typ) — 0.21 A
Output Sink Current (typ) — 0.36 A
Rise Time (typ) — 100 ns
Fall Time (typ) — 50 ns
Propagation Delay (typ) — 680 ns
Quiescent Current (VCC/VBS, typ) — 150 uA
Shutdown Pin — Yes (active-low shutdown input)
Cross-Conduction Prevention — Yes (matched propagation delay)
dV/dt Immunity — Yes
Negative VS Transient Tolerance — Yes
동작 온도 범위 — -40 C to +150 C

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