IRS21867STRPBF vs IRS2110STRPBF 비교

다음의 상세 나란히 비교: IRS21867STRPBF 제조: Infineon 및 IRS2110STRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRS21867STRPBF IRS2110STRPBF
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.55 $1.42
토폴로지 High-Side and Low-Side (Half-Bridge) —
Offset Voltage (High-Side, max) 600 V —
Output Current (Source/Sink, typical) 4 A / 4 A —
Supply Voltage VCC 10 V to 20 V —
Bootstrap Supply VBS up to VCC + 600 V (floating) —
Input Logic Compatibility 3.3 V and 5 V CMOS / TTL —
Rise Time (typ, 1 nF load) 22 ns —
Fall Time (typ, 1 nF load) 18 ns —
Turn-On Propagation Delay (typ) 170 ns —
Turn-Off Propagation Delay (typ) 170 ns —
Undervoltage Lockout Yes (VCC and VBS) Yes (VCC and VBS)
Operating Temperature Range (TJ) -40C to +150C —
패키지 8-SOIC (SOIC-8, 8-pin SOIC N T/R) 16-pin SOIC Wide-Body (SOIC-WB), Tape and Reel
실장 유형 Surface Mount Surface Mount
MSL 레벨 2 3 (168 hours)
RoHS 상태 Compliant —
Lead-Free Status Lead Free —
Channel Count 2 (1 high-side + 1 low-side) —
Input Type Non-Inverting (HIN, LIN) —
Driver Configuration — Half-Bridge
Number of Drivers — 2 (High-Side and Low-Side)
출력 수 — 2
출력 유형 — Non-Inverting
Maximum Offset Voltage — 500 V
Gate Drive Supply (VCC) — 10 V to 20 V
Source/Sink Output Current (typ.) — 2.5 A / 2.5 A
Propagation Delay ton/toff (typ.) — 30 ns / 30 ns
Rise/Fall Time (typ.) — 17 ns / 25 ns
Logic Input Compatibility — CMOS/TTL compatible (3.3 V logic compatible)
Bootstrap Diode — Integrated
Shutdown Input — Active-low, forces both outputs low
동작 온도 — -40 C to +150 C
Lead-Free / RoHS — Lead-Free, RoHS Compliant

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