ISC0703NLSATMA1 vs IAUC60N04S6N044ATMA1 비교

다음의 상세 나란히 비교: ISC0703NLSATMA1 제조: Infineon 및 IAUC60N04S6N044ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 ISC0703NLSATMA1 IAUC60N04S6N044ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.51 $0.98
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Ta=25C 13 A —
Continuous Drain Current (ID) at Tc=25C 57 A —
Power Dissipation (PD) at Ta=25C 3 W —
Power Dissipation (PD) at Tc=25C 44 W —
Technology Trench MOSFET (OptiMOS family) OptiMOS-6 N-channel trench MOSFET
패키지 PG-TDSON-8 (5x6 mm) PG-TDSON-8 (5x6 mm) with exposed pad
실장 유형 Surface Mount Surface Mount
동작 온도 범위 -55C to +150C (junction) —
Standard Package Quantity 5,000 (reel) —
MSL 레벨 [DATA_NEEDED: MSL level] 1 (unlimited)
RoHS 상태 Compliant Compliant
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] —
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=10V] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Avalanche Energy (EAS) [DATA_NEEDED: EAS rating] —
Drain-Source Voltage (V_DS) — 40 V
Gate-Source Voltage (V_GS) — [DATA_NEEDED: max V_GS rating]
Continuous Drain Current (I_D) at Tc=25°C — 60 A
Continuous Drain Current (I_D) at Tc=100°C — [DATA_NEEDED: pulsed/current derated value]
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current]
On-Resistance R_DS(on) max @ V_GS=10V — 4.4 mΩ
On-Resistance R_DS(on) max @ V_GS=4.5V — [DATA_NEEDED: R_DS(on) at V_GS=4.5V]
Total Gate Charge (Q_g) — [DATA_NEEDED: typical gate charge]
Power Dissipation (P_D) at Tc=25°C — 42 W
동작 접합 온도 — -55°C to +175°C
Automotive Qualification — AEC-Q101 qualified (IAUC prefix)
Lead-Free / Halogen-Free — Yes / [DATA_NEEDED: halogen-free status]

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