ISC110N12NM6ATMA1 vs BSC120N03LSGATMA1 비교
다음의 상세 나란히 비교: ISC110N12NM6ATMA1 제조: Infineon 및 BSC120N03LSGATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | ISC110N12NM6ATMA1 | BSC120N03LSGATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.51 | $0.36 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 120 V | 30 V |
| Continuous Drain Current (ID) at Ta | 11 A | — |
| Continuous Drain Current (ID) at Tc | 62 A | — |
| On-Resistance RDS(on) max at VGS=10V | 9.8 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | +/-20 V |
| Gate Threshold Voltage (VGS(th)) typ | 3.1 V | — |
| Total Gate Charge (Qg) | 15.4 nC | — |
| Input Capacitance (Ciss) | 1.1 nF | — |
| Output Capacitance (Coss) | 330 pF | — |
| Reverse Transfer Capacitance (Crss) | 10 pF | — |
| Power Dissipation (Pd) at Tc | 94 W | — |
| Power Dissipation (Pd) at Ta | 3 W | — |
| Avalanche Energy (EAS) | 185 mJ | — |
| 동작 접합 온도 | -55 °C to +175 °C | — |
| 패키지 | SuperSO8 (TDSON-8) | PG-TDSON-8-5 (SuperSO-8, 5x6 mm) |
| 실장 유형 | Surface Mount | Surface Mount |
| RoHS 상태 | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 3 |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta=25C | — | 12 A |
| Continuous Drain Current (ID) at Tc=25C | — | 39 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance RDS(on) at VGS=10V | — | 12 mOhm (typical) |
| On-State Resistance RDS(on) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 28 W |
| 동작 온도 범위 | — | -55C to +150C (TJ) |
| MSL 레벨 | — | 1 (per JEDEC J-STD-020) |