ISL26712IHZ-T vs ISLA212P20IRZ 비교
다음의 상세 나란히 비교: ISL26712IHZ-T 제조: Renesas Electronics 및 ISLA212P20IRZ 제조: Renesas Electronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | ISL26712IHZ-T | ISLA212P20IRZ |
|---|---|---|
| 브랜드 | Renesas Electronics | Renesas Electronics |
| 카테고리 | ADC/DAC | ADC/DAC |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $3.96 | $19.55 |
| 분해능 | 12 bits | — |
| 샘플링 속도 | 1 MSPS | — |
| Architecture | SAR (Successive Approximation Register) | SAR |
| Number of Input Channels | 1 (true differential) | — |
| Analog Supply Voltage | 2.7 V to 5.25 V | — |
| Digital Supply Voltage | 2.7 V to VCC | — |
| Input Type | Differential (high impedance) | Single-ended / differential (femtoCharge™ switched-cap) |
| Integral Nonlinearity (INL) | ±1 LSB (max) | — |
| Differential Nonlinearity (DNL) | ±0.5 LSB (max) | — |
| Signal-to-Noise Ratio (SNR) | 73 dB (typ) | — |
| Effective Number of Bits (ENOB) | 11.8 bits (typ) | — |
| Reference Input | External or internal (overdriven) | — |
| Digital Interface | SPI / QSPI / MICROWIRE-compatible | — |
| Power Consumption | 12.5 mW at 1 MSPS, 5V | [DATA_NEEDED: total power at 200 MSPS] |
| 동작 온도 | -40C to +85C (industrial) | -40 °C to +85 °C |
| 패키지 | SOT-23-8 | — |
| ESD Rating (HBM) | 4 kV | — |
| ESD Rating (CDM) | 1.5 kV | — |
| 실장 유형 | Surface Mount | Surface Mount |
| RoHS 상태 | Compliant | Compliant |
| Number of Bits | — | 12 |
| Sampling Rate (Per Second) | — | 200 MSPS |
| Number of Inputs | — | 1 |
| Data Interface | — | Serial, SPI (configuration); LVDS or CMOS (data) |
| 패키지 / 케이스 | — | 72-VFQFN Exposed Pad, 10 mm x 10 mm |
| Supply Voltage (Analog) | — | [DATA_NEEDED: analog supply voltage] |
| Supply Voltage (Digital) | — | [DATA_NEEDED: digital supply voltage] |
| Output Format | — | LVDS or CMOS, SDR or DDR |
| Configuration Port | — | SPI |
| Process Technology | — | Standard CMOS with proprietary FemtoCharge™ sampling |
| Packaging | — | Tray |