ISZ056N03LF2SATMA1 vs ISC025N08NM5LF2ATMA1 비교
다음의 상세 나란히 비교: ISZ056N03LF2SATMA1 제조: Infineon 및 ISC025N08NM5LF2ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | ISZ056N03LF2SATMA1 | ISC025N08NM5LF2ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.49 | $1.74 |
| Manufacturer | Infineon Technologies | — |
| Series | StrongIRFET 2 | — |
| 트랜지스터 유형 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Ta | 16 A | — |
| Continuous Drain Current (ID) at Tc | 72 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: gate-source voltage max] | — |
| Gate Threshold Voltage (VGS(th)) | 2.35 V (typ) | — |
| On-Resistance (RDS(on)) max at VGS=10V | 5.6 mOhm | — |
| On-Resistance (RDS(on)) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 52 W | — |
| 동작 온도 범위 | -55 C to +175 C | [DATA_NEEDED: operating temperature range] |
| 패키지 | PG-TSDSON-8 (PQFN 3.3x3.3 mm) | PG-TDSON-8 FL (Surface Mount) |
| 실장 유형 | Surface Mount | Surface Mount |
| RoHS 상태 | Compliant | Compliant |
| FET Type | — | N-Channel |
| Technology | — | MOSFET (Metal Oxide), OptiMOS 5 LF2 |
| Drain-Source Voltage (VDS) Max | — | 80 V |
| Continuous Drain Current (ID) @ TA=25°C | — | 23 A |
| Continuous Drain Current (ID) @ TC=25°C | — | 198 A |
| On-Resistance (RDS(on)) Max | — | 2.55 mΩ |
| Gate-Source Threshold (VGS(th)) Max | — | 3.9 V |
| Total Gate Charge (Qg) Max | — | 96 nC |
| Power Dissipation @ TA | — | 3 W |
| Power Dissipation @ TC | — | 217 W |
| Polarity | — | N-Channel |
| Ordering Code Suffix | — | ATMA1 (Tape & Reel, 13-inch) |