ISZ173N15NM6ATMA1 vs IPC100N04S5L1R5ATMA1 비교

다음의 상세 나란히 비교: ISZ173N15NM6ATMA1 제조: Infineon 및 IPC100N04S5L1R5ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
ISZ173N15NM6ATMA1 ISZ173N15NM6ATMA1 - 150V OptiMOS 6 N-MOSFET 48A | Infineon

ISZ173N15NM6ATMA1 - 150V OptiMOS 6 N-MOSFET 48A | Infineon

ISZ173N15NM6ATMA1 ✓ 활성
Infineon
IPC100N04S5L1R5ATMA1 IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon

IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon

IPC100N04S5L1R5ATMA1 ✓ 활성

사양 비교

파라미터 ISZ173N15NM6ATMA1 IPC100N04S5L1R5ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.18 $1.18
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 6 150V —
FET Type N-Channel —
Drain-Source Voltage (VDS) 150 V —
Continuous Drain Current (ID) at Ta 7.9 A —
Continuous Drain Current (ID) at Tc 48 A —
Power Dissipation (PD) at Ta 2.5 W —
Power Dissipation (PD) at Tc 94 W —
Technology OptiMOS 6 trench-gate MOSFET —
패키지 PG-TSDSON-8 FL PG-TDSON-8-34 (SS08 leadless)
실장 유형 Surface Mount Surface Mount
Operating Mode Enhancement Mode —
Application Hard and soft switching, high/low frequency —
Lead-Free Yes —
RoHS 상태 Compliant Compliant (Green Product)
Tape & Reel Quantity 5000 —
Product Family — OptiMOS-5 40 V
Polarity / Channel Type — N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) Max — 40 V
Gate-Source Voltage (VGS) Max — 20 V
Continuous Drain Current (ID) at Tc=25C — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
Power Dissipation (PD) at Tc=25C — 115 W
On-Resistance RDS(on) at VGS=10 V — 1.5 mOhm (typ)
On-Resistance RDS(on) at VGS=4.5 V — 1.8 mOhm (typ)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ]
동작 온도 범위 — -55C to +175C
MSL 레벨 — MSL1 (260C peak reflow)
AEC-Q101 Qualified — Yes
Avalanche Tested — 100%

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