ITS4200SMEPHUMA1 vs BTS3050TFATMA1 비교

다음의 상세 나란히 비교: ITS4200SMEPHUMA1 제조: Infineon 및 BTS3050TFATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
ITS4200SMEPHUMA1 ITS4200SMEPHUMA1 - 1.4A Smart High-Side Switch | Infineon

ITS4200SMEPHUMA1 - 1.4A Smart High-Side Switch | Infineon

ITS4200SMEPHUMA1 ✓ 활성

사양 비교

파라미터 ITS4200SMEPHUMA1 BTS3050TFATMA1
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.99 $1.02
Product Type Smart High-Side Power Switch —
토폴로지 High-Side, N-Channel MOSFET —
Number of Channels 1 —
Continuous Load Current 1.4 A —
On-State Resistance (Rdson) 150 milliohm (typical) —
Supply Voltage Range -3 V to 45 V —
Overvoltage Protection Yes (load-dump resilient) —
Undervoltage Shutdown Yes —
Short Circuit Protection Yes —
열 차단 Yes (with auto-restart) —
Current Limitation Yes —
Input Logic Type Current-Controlled, CMOS-compatible —
Inductive Load Switching Yes —
패키지 PG-SOT223-4 (4-pin, 3+Tab) PG-TO252-3-313 (TO-252 / DPAK)
실장 유형 Surface Mount Surface Mount
동작 온도 -40C to +125C (automotive grade) -40 C to +150 C (junction)
AEC-Q100 Qualification Yes —
Technology Smart Power (vertical N-DMOS + charge pump + CMOS logic) —
RoHS 상태 Compliant —
Part Number — BTS3050TFATMA1
Manufacturer — Infineon Technologies
Product Family — HITFET Smart Low-Side Switch
Switch Type — N-Channel Low-Side Smart Power Switch
출력 수 — 1
RDS(on) (typ) — 44 mOhm at 25 C
Continuous Drain Current — 4 A
Load Voltage (max) — 5.5 V
Logic Input — CMOS compatible, logic-level
Status Output — Yes (fault feedback)
Protection Features — Over-current, Over-temperature, Over-voltage, ESD
AEC-Q100 — Qualified
RoHS — Compliant

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