K3K8K80BM-JGCT vs K3K9K90BM-JGCT 비교
다음의 상세 나란히 비교: K3K8K80BM-JGCT 제조: Samsung Electronics 및 K3K9K90BM-JGCT 제조: Samsung Electronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Samsung Electronics
K3K8K80BM-JGCT - Samsung LPDDR DRAM Memory IC | Samsung Electronics
K3K8K80BM-JGCT ✓ 활성사양 비교
| 파라미터 | K3K8K80BM-JGCT | K3K9K90BM-JGCT |
|---|---|---|
| 브랜드 | Samsung Electronics | Samsung Electronics |
| 카테고리 | Memory ICs | Memory ICs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $3.10 | $9.20 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Family | K3K mobile DRAM (LPDDR) component series | — |
| 메모리 유형 | Low Power DRAM (LPDDR) component | LPDDR5 SDRAM |
| Density | [DATA_NEEDED: die density in Gb] | [DATA_NEEDED: Density] |
| 메모리 구성 | [DATA_NEEDED: x8/x16 organization] | [DATA_NEEDED: Organization] |
| 인터페이스 | [DATA_NEEDED: LPDDR4X or LPDDR5] | [DATA_NEEDED: Channel configuration] |
| Maximum Data Rate | [DATA_NEEDED: Mbps] | — |
| Supply Voltage (VDD) | [DATA_NEEDED: core supply voltage] | [DATA_NEEDED: VDD] |
| Supply Voltage (VDDQ) | [DATA_NEEDED: I/O supply voltage] | [DATA_NEEDED: VDDQ] |
| Package Type | FBGA (Ball Grid Array) | FBGA |
| Ball Count | [DATA_NEEDED: package ball count] | — |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature Range] |
| Speed Grade Suffix | J (per Samsung speed-grade coding) | — |
| Packing Suffix | CT (per Samsung packing-code convention) | — |
| RoHS 상태 | [DATA_NEEDED: RoHS compliance] | [DATA_NEEDED: RoHS Status] |
| MSL 레벨 | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: MSL Level] |
| 데이터 속도 | — | [DATA_NEEDED: Data Rate] |
| CAS 레이턴시 | — | [DATA_NEEDED: CAS Latency] |
| Refresh | — | [DATA_NEEDED: Refresh scheme] |
| Package Code | — | BM |
| Speed/Temperature Grade Code | — | JGCT |