K3KL1L10GM-JGCT vs K3KL3L30CM-BGCT 비교
다음의 상세 나란히 비교: K3KL1L10GM-JGCT 제조: Samsung Electronics 및 K3KL3L30CM-BGCT 제조: Samsung Electronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | K3KL1L10GM-JGCT | K3KL3L30CM-BGCT |
|---|---|---|
| 브랜드 | Samsung Electronics | Samsung Electronics |
| 카테고리 | DRAM | Memory ICs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $30.90 | $0.00 |
| 메모리 유형 | LPDDR5X DRAM (SDRAM) | LPDDR5X SDRAM |
| Density | 32 Gb (4 GB) | 64 Gbit |
| Interface Organization | x64 | — |
| 데이터 속도 | LPDDR5X-7500 (up to 7500 MT/s) | — |
| Generation | LPDDR5X (premium low-power DRAM) | — |
| Speed vs Previous Generation | Up to 1.25x faster than LPDDR5 | — |
| Power Efficiency vs Previous Generation | Approximately 25% better than LPDDR5 | — |
| 패키지 | 441-ball FBGA | [DATA_NEEDED: exact package code and ball count] |
| 실장 유형 | Surface Mount (soldered-down BGA) | Surface Mount (BGA) |
| Application Class | AI edge devices, in-vehicle devices, flagship mobile | Mobile / embedded main memory |
| 공급 전압 | [DATA_NEEDED: VDD/VDDQ supply voltage] | — |
| 동작 온도 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Access Latency | [DATA_NEEDED: CAS latency / tRCD / tRP timings] | — |
| Refresh Rate | [DATA_NEEDED: refresh specification] | — |
| RoHS 상태 | unknown | [DATA_NEEDED: RoHS status] |
| MSL 레벨 | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: moisture sensitivity level] |
| 메모리 구성 | — | x64 |
| Speed Grade | — | LPDDR5X-7500 (7500 MT/s) |
| Technology | — | Stacked DRAM die, mobile BGA |
| Core Voltage | — | [DATA_NEEDED: VDD core voltage] |
| I/O Voltage (VDDQ) | — | [DATA_NEEDED: VDDQ voltage] |
| Refresh | — | [DATA_NEEDED: refresh scheme] |
| Standards Compliance | — | JEDEC LPDDR5X specification |