K3KL8L80CM-MGCT vs K3K8K80BM-JGCT 비교
다음의 상세 나란히 비교: K3KL8L80CM-MGCT 제조: Samsung Electronics 및 K3K8K80BM-JGCT 제조: Samsung Electronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Samsung Electronics
K3K8K80BM-JGCT - Samsung LPDDR DRAM Memory IC | Samsung Electronics
K3K8K80BM-JGCT ✓ 활성사양 비교
| 파라미터 | K3KL8L80CM-MGCT | K3K8K80BM-JGCT |
|---|---|---|
| 브랜드 | Samsung Electronics | Samsung Electronics |
| 카테고리 | DRAM | Memory ICs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.00 | $3.10 |
| 메모리 유형 | LPDDR5X SDRAM | Low Power DRAM (LPDDR) component |
| Density | 32 Gbit (4 GB) | [DATA_NEEDED: die density in Gb] |
| 메모리 구성 | x32 | [DATA_NEEDED: x8/x16 organization] |
| Max Data Rate | 7500 Mbps | — |
| Clock Frequency | 3750 MHz | — |
| Core Supply Voltage (VDD) | 1.05 V | — |
| I/O Supply Voltage (VDDQ) | 900 mV (500 mV low-power mode) | — |
| VDD2 Supply Voltage | 1.8 V | — |
| 패키지 | 315-ball FBGA | — |
| 동작 온도 | -25C to +85C | [DATA_NEEDED: operating temperature range] |
| 실장 유형 | Surface Mount | Surface Mount |
| 인터페이스 | LPDDR5X (JEDEC LPDDR5 extension) | [DATA_NEEDED: LPDDR4X or LPDDR5] |
| Application Segment | Mobile, Automotive, On-device AI, PC | — |
| Power Efficiency | ~20-25% improvement vs LPDDR5 (per Samsung) | — |
| RoHS 상태 | Compliant (per JLCPCB listing) | [DATA_NEEDED: RoHS compliance] |
| MSL 레벨 | [DATA_NEEDED: MSL Level] | [DATA_NEEDED: moisture sensitivity level] |
| Manufacturer | — | Samsung Electronics |
| Product Family | — | K3K mobile DRAM (LPDDR) component series |
| Maximum Data Rate | — | [DATA_NEEDED: Mbps] |
| Supply Voltage (VDD) | — | [DATA_NEEDED: core supply voltage] |
| Supply Voltage (VDDQ) | — | [DATA_NEEDED: I/O supply voltage] |
| Package Type | — | FBGA (Ball Grid Array) |
| Ball Count | — | [DATA_NEEDED: package ball count] |
| Speed Grade Suffix | — | J (per Samsung speed-grade coding) |
| Packing Suffix | — | CT (per Samsung packing-code convention) |