K3LK4L40DM-BGCT vs K3KL5L50DM-BGCU 비교
다음의 상세 나란히 비교: K3LK4L40DM-BGCT 제조: Samsung Electronics 및 K3KL5L50DM-BGCU 제조: Samsung Electronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Samsung Electronics
K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics
K3LK4L40DM-BGCT ✓ 활성사양 비교
| 파라미터 | K3LK4L40DM-BGCT | K3KL5L50DM-BGCU |
|---|---|---|
| 브랜드 | Samsung Electronics | Samsung Electronics |
| 카테고리 | DRAM | Memory ICs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $40.50 | $0.00 |
| 메모리 유형 | DRAM (SDRAM component) | LPDDR5X SDRAM |
| Manufacturer | Samsung Electronics | — |
| Density | [DATA_NEEDED: Density] | 128 Gb (16 GB) |
| Organization (x-width) | [DATA_NEEDED: Organization] | — |
| 데이터 속도 | [DATA_NEEDED: Data Rate] | 8533 Mbps per pin |
| Supply Voltage Class | [DATA_NEEDED: Supply Voltage] | — |
| CAS 레이턴시 | [DATA_NEEDED: CAS Latency] | [DATA_NEEDED: CAS latency] |
| Package Type | BGA (per -BGC ordering-code suffix) | — |
| Package Ball Count | [DATA_NEEDED: Ball Count] | — |
| 실장 유형 | Surface Mount | Surface Mount (BGA) |
| 동작 온도 | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: operating temperature range] |
| Refresh Rate | [DATA_NEEDED: Refresh Interval] | — |
| RoHS 상태 | [DATA_NEEDED: RoHS Status] | unknown |
| Lead Free | [DATA_NEEDED: Lead-Free Status] | — |
| MSL 레벨 | [DATA_NEEDED: Moisture Sensitivity Level] | [DATA_NEEDED: moisture sensitivity level] |
| Packaging | Tape & Reel (per -T-style suffix convention) [DATA_NEEDED: confirmed packaging] | — |
| 메모리 구성 | — | [DATA_NEEDED: organization (x)] |
| Supply Voltage (VDD) | — | [DATA_NEEDED: VDD voltage] |
| 패키지 | — | [DATA_NEEDED: package ball count / FBGA code] |
| 인터페이스 | — | LPDDR5X (JEDEC low-power DRAM interface) |
| Prefetch | — | 16n (LPDDR5/5X architecture) |
| Power Efficiency | — | approx. 20% better than LPDDR5 (per Samsung LPDDR5X family page) |
| Refresh | — | [DATA_NEEDED: refresh scheme] |
| Production Status | — | In production (in stock at distributors) |