K9IUGY8J7B-BCK0 vs K9JUGY8J5C-BCK0 비교
다음의 상세 나란히 비교: K9IUGY8J7B-BCK0 제조: Samsung Electronics 및 K9JUGY8J5C-BCK0 제조: Samsung Electronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Samsung Electronics
K9IUGY8J7B-BCK0 - 1Tb V-NAND TLC Flash | Samsung | Memory ICs
K9IUGY8J7B-BCK0 ✓ 활성사양 비교
| 파라미터 | K9IUGY8J7B-BCK0 | K9JUGY8J5C-BCK0 |
|---|---|---|
| 브랜드 | Samsung Electronics | Samsung Electronics |
| 카테고리 | Memory ICs | Flash |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.00 | $0.00 |
| Manufacturer | Samsung Electronics | — |
| MPN | K9IUGY8J7B-BCK0 | — |
| Product Type | V-NAND Flash (raw NAND) | — |
| Density | 1 Tbit | 1 Tb |
| Cell Type | TLC (Triple-Level Cell, 3 bits/cell) | Triple-Level Cell (TLC) |
| Technology | Samsung V-NAND (3D vertical NAND) | Samsung V-NAND (3D) |
| Speed Grade | BCK0 | — |
| 인터페이스 | [DATA_NEEDED: interface type and data rate] | [DATA_NEEDED: async/DDR or Toggle DDR interface and mode] |
| 공급 전압 | [DATA_NEEDED: VCC range] | — |
| 메모리 구성 | [DATA_NEEDED: page/block organization] | [DATA_NEEDED: page/block organization] |
| Program/Erase Cycles | [DATA_NEEDED: P/E endurance] | — |
| Package Type | [DATA_NEEDED: package code / ball count] | — |
| 동작 온도 | [DATA_NEEDED: temperature range] | [DATA_NEEDED: operating temperature range] |
| 실장 유형 | Surface Mount | Surface Mount |
| RoHS 상태 | [DATA_NEEDED: RoHS status] | Compliant |
| 수명 주기 상태 | Active | — |
| 메모리 유형 | — | NAND Flash (V-NAND TLC) |
| Page Size | — | [DATA_NEEDED: page size] |
| Block Size | — | [DATA_NEEDED: block size] |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range] |
| Supply Voltage (VCCQ) | — | [DATA_NEEDED: VCCQ range] |
| Program Time (typ) | — | [DATA_NEEDED: tPROG] |
| Read Time (typ) | — | [DATA_NEEDED: tR] |
| 패키지 | — | [DATA_NEEDED: FBGA ball count / package code] |
| Endurance (P/E cycles) | — | [DATA_NEEDED: program/erase endurance] |
| Data Retention | — | [DATA_NEEDED: retention specification] |