K9MUGY8R4A-CCQ0 vs K9NUGY8R6B-BCQ0 비교
다음의 상세 나란히 비교: K9MUGY8R4A-CCQ0 제조: Samsung Electronics 및 K9NUGY8R6B-BCQ0 제조: Samsung Electronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Samsung Electronics
K9MUGY8R4A-CCQ0 - Samsung V-NAND Flash Memory | Samsung Electronics
K9MUGY8R4A-CCQ0 ✓ 활성Samsung Electronics
K9NUGY8R6B-BCQ0 - Samsung NAND Flash Memory | Samsung Electronics
K9NUGY8R6B-BCQ0 ✓ 활성사양 비교
| 파라미터 | K9MUGY8R4A-CCQ0 | K9NUGY8R6B-BCQ0 |
|---|---|---|
| 브랜드 | Samsung Electronics | Samsung Electronics |
| 카테고리 | Memory ICs | Memory ICs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.00 | $0.00 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Family | K9 V-NAND (NAND Flash) | K9NUGY series NAND flash |
| Memory Technology | V-NAND (vertical NAND flash) | — |
| Cell Type | [DATA_NEEDED: cell type (MLC/TLC)] | — |
| Density | [DATA_NEEDED: total density] | [DATA_NEEDED: total density] |
| 메모리 구성 | [DATA_NEEDED: page/block organization] | [DATA_NEEDED: page/block organization] |
| 인터페이스 유형 | [DATA_NEEDED: interface (Toggle DDR/ONFI)] | — |
| Maximum I/O Speed | [DATA_NEEDED: data transfer rate] | — |
| Supply Voltage - VCC | [DATA_NEEDED: VCC range] | — |
| Supply Voltage - VCCQ | [DATA_NEEDED: VCCQ range] | — |
| Page Program Time (typ) | [DATA_NEEDED: tPROG] | — |
| Block Erase Time (typ) | [DATA_NEEDED: tBERS] | — |
| Endurance (P/E cycles) | [DATA_NEEDED: endurance] | — |
| Package Type | [DATA_NEEDED: package type and pin count] | [DATA_NEEDED: package code] |
| 동작 온도 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: temperature range] |
| 실장 유형 | Surface Mount | Surface Mount |
| RoHS 상태 | [DATA_NEEDED: RoHS status] | unknown |
| 메모리 유형 | — | NAND Flash |
| Cell Technology | — | [DATA_NEEDED: SLC/MLC/TLC] |
| Supply Voltage VCC | — | [DATA_NEEDED: VCC range] |
| VCCQ Voltage | — | [DATA_NEEDED: VCCQ range] |
| 인터페이스 | — | Asynchronous NAND I/O (command/address/data multiplexed) |
| Page Size | — | [DATA_NEEDED: page size] |
| Block Size | — | [DATA_NEEDED: block size] |
| Page Read Time | — | [DATA_NEEDED: tR] |
| Page Program Time | — | [DATA_NEEDED: tPROG] |
| Block Erase Time | — | [DATA_NEEDED: tBERS] |
| Program/Erase Cycles | — | [DATA_NEEDED: endurance] |
| Data Retention | — | [DATA_NEEDED: retention] |