MC9S12DG128CPV vs MC9S12DP512CPV 비교
다음의 상세 나란히 비교: MC9S12DG128CPV 제조: NXP Semiconductors 및 MC9S12DP512CPV 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
NXP Semiconductors
MC9S12DP512CPV - 16-Bit HCS12 MCU, 512KB Flash, 112-LQFP | NXP
MC9S12DP512CPV ✓ 활성사양 비교
| 파라미터 | MC9S12DG128CPV | MC9S12DP512CPV |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | Microcontrollers | Microcontrollers |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $17.85 | $16.75 |
| Core Architecture | HCS12 (16-bit CISC) | — |
| Maximum CPU Clock | 25 MHz | — |
| Program Memory (Flash) | 128 KB (128K x 8) | 512 KB (512K x 8) |
| Data Memory (RAM) | 8 KB | — |
| EEPROM | 2 KB | 4 KB |
| Number of I/O Pins | 91 | — |
| 패키지 / 케이스 | 112-LQFP (20 x 20 mm) | 112-LQFP (20 x 20 mm) |
| Analog-to-Digital Converter | 8-channel, 10-bit ATD | — |
| CAN Modules | Up to 3 x MSCAN (CAN 2.0A/B) | — |
| Serial Interfaces | 2 x SCI (UART), 1 x SPI, 1 x I2C | — |
| Timer | Enhanced Capture Timer (ECT), 8 channels | — |
| Operating Voltage | 4.5 V to 5.5 V (single 5V supply) | — |
| 동작 온도 | -40 C to +125 C (automotive) | -40 C to +85 C (industrial) |
| 실장 유형 | Surface Mount | Surface Mount |
| MSL 레벨 | 3 (168 hours) | — |
| Debug Interface | Background Debug Mode (BDM) | BDM (Background Debug Mode) |
| RoHS 상태 | [DATA_NEEDED: RoHS status from manufacturer] | Compliant (lead-free) |
| Flash Endurance | 100,000 write/erase cycles (typical) | — |
| Core | — | HCS12 (16-bit) |
| Bus Frequency | — | 25 MHz |
| RAM Size | — | 12 KB (12K x 8) |
| Number of I/O Lines | — | 91 |
| 공급 전압 | — | 5.0 V (4.5 V to 5.5 V) |
| ADC | — | 2 x 8-channel, 10-bit |
| PWM Channels | — | 8 |
| Enhanced Capture Timer | — | 8-channel 16-bit ECT |
| SCI (UART) | — | 2 |
| SPI | — | 1 |
| I2C | — | 1 |
| CAN | — | 1 x CAN 2.0 |
| Oscillator | — | Internal PLL with external crystal |
| Process Technology | — | 0.25 um Flash |