MMG3004NT1528 vs MMG3004NT1 비교

다음의 상세 나란히 비교: MMG3004NT1528 제조: NXP Semiconductors 및 MMG3004NT1 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

NXP Semiconductors
MMG3004NT1528 MMG3004NT1528 - 400-2200 MHz 17dB 27dBm InGaP HBT GPA | NXP

MMG3004NT1528 - 400-2200 MHz 17dB 27dBm InGaP HBT GPA | NXP

MMG3004NT1528 ✓ 활성

사양 비교

파라미터 MMG3004NT1528 MMG3004NT1
브랜드 NXP Semiconductors NXP Semiconductors
카테고리 RF Amplifiers RF Amplifiers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $11.60 $2.45
Manufacturer NXP Semiconductors (formerly Freescale) —
Part Description InGaP HBT Broadband General-Purpose Amplifier —
Process Technology Indium Gallium Phosphide HBT (InGaP HBT) —
Frequency Range 400 MHz to 2200 MHz 400 MHz to 2200 MHz
Small-Signal Gain 17 dB 17 dB (typical)
Output P1dB +27 dBm —
공급 전압 [DATA_NEEDED: Vcc typical] —
공급 전류 [DATA_NEEDED: Icc typical] —
Noise Figure [DATA_NEEDED: NF dB] —
OIP3 [DATA_NEEDED: OIP3 dBm] —
Input Return Loss [DATA_NEEDED: S11 dB] —
Output Return Loss [DATA_NEEDED: S22 dB] —
동작 온도 -40C to +85C —
패키지 16-pin PQFN (5x5 mm) 16-PQFN (5x5 mm)
실장 유형 Surface Mount Surface Mount
Packaging Tape and Reel (1500-unit reel, 528 suffix) —
RoHS 상태 Compliant Compliant
Technology — InGaP HBT (Heterojunction Bipolar Transistor)
기능 — General Purpose Amplifier (GPA), Class A, small-signal, broadband
Output Power (P1dB) — +27 dBm (typical)
Output Third-Order Intercept (OIP3) — [DATA_NEEDED: OIP3]
동작 공급 전압 — [DATA_NEEDED: VCC range]
Operating Supply Current — [DATA_NEEDED: ICC]
Input/Output Matching — Internally prematched to 50 ohm
Package Type — PQFN-16 with exposed thermal paddle
동작 온도 범위 — [DATA_NEEDED: operating temperature range]
Storage Temperature Range — [DATA_NEEDED: storage temperature range]
MSL 레벨 — [DATA_NEEDED: MSL rating]
Lead-Free — Yes

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