MPC8544VTANGA vs MPC8544VJANGA 비교
다음의 상세 나란히 비교: MPC8544VTANGA 제조: NXP Semiconductors 및 MPC8544VJANGA 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
NXP Semiconductors
MPC8544VTANGA - PowerQUICC III e500 MPU 800MHz 783-FCPBGA | NXP
MPC8544VTANGA ObsoleteNXP Semiconductors
MPC8544VJANGA - PowerQUICC III 800MHz SoC | NXP Semiconductors
MPC8544VJANGA ⚠ 최종 구매사양 비교
| 파라미터 | MPC8544VTANGA | MPC8544VJANGA |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | Microcontrollers | Microcontrollers |
| 수명 주기 상태 | Obsolete | 최종 구매 |
| Core Architecture | PowerPC e500 (32-bit) | — |
| Number of Cores | 1 | — |
| Maximum Core Frequency | 800 MHz | — |
| L1 Cache (Instruction) | 32 KB | — |
| L1 Cache (Data) | 32 KB | — |
| Memory Controller | DDR1/DDR2 SDRAM with ECC | DDR1 / DDR2 with ECC |
| Ethernet MAC | 4 x 10/100/1000 Mbps (SGMII) | — |
| PCI Express | 1 x PCIe x4 / 4 x PCIe x1 | PCIe x1 / x2 via SerDes |
| USB | USB 2.0 (host/device) | USB 2.0 Host/Device |
| Security Engine | SEC 3.0 integrated | — |
| Local Bus | eLBC with NAND/PCMCIA support | — |
| 동작 온도 | 0 C to 105 C | 0C to +105C |
| 패키지 | 783-FCPBGA (29x29 mm) | 783-FCBGA (29x29 mm) |
| 실장 유형 | Surface Mount (BGA) | Surface Mount (BGA) |
| Supply Voltage Core | [DATA_NEEDED: core Vcc value] | — |
| Signal Processing | SPE (Signal Processing Engine) | — |
| RoHS 상태 | Compliant (lead-free FCPBGA) | Compliant |
| Manufacturer | — | NXP Semiconductors (formerly Freescale Semiconductor) |
| Product Family | — | PowerQUICC III (MPC85xx) |
| CPU Core | — | PowerPC e500 v2, 32-bit |
| Core Count | — | 1 |
| Maximum CPU Frequency | — | 800 MHz |
| Maximum DDR2 Memory | — | 2 GB |
| Ethernet Interfaces | — | 2x Gigabit Ethernet (SGMII/GMII/RGMII) |
| PCI | — | Yes (32/64-bit, up to 66 MHz) |
| Security Accelerator (SEC) | — | Not integrated in MPC8544 (MPC8544E variant only) |
| UART / SPI / I2C | — | Dual UART, SPI, I2C |
| Local Bus Controller | — | 16-bit, up to 66 MHz |
| Operating Voltage | — | 1.8 V / 2.5 V / 3.3 V |
| Silicon Revision | — | Rev 2.1 |
| Process Technology | — | 90 nm CMOS |