MPX2010D vs MPX2010GS 비교

다음의 상세 나란히 비교: MPX2010D 제조: STMicroelectronics 및 MPX2010GS 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

NXP Semiconductors
MPX2010GS MPX2010GS - 10 kPa Gauge Pressure Sensor | NXP | SIP-4

MPX2010GS - 10 kPa Gauge Pressure Sensor | NXP | SIP-4

MPX2010GS Obsolete

사양 비교

파라미터 MPX2010D MPX2010GS
브랜드 STMicroelectronics NXP Semiconductors
카테고리 Pressure Sensors Pressure Sensors
수명 주기 상태 활성 Obsolete
재고 상태 In Stock In Stock
단가 (USD) $9.10 $15.95
Pressure Type Differential (Port 1 vs Port 2) Vented Gauge
Operating Pressure Range 0 kPa to 10 kPa (0 PSI to 1.45 PSI) —
Maximum Overpressure [DATA_NEEDED: maximum overpressure rating] —
출력 유형 Analog Wheatstone Bridge (mV) Wheatstone Bridge (analog voltage)
Output Voltage Span 0 mV to 25 mV at 10V excitation —
Sensitivity 2.5 mV/kPa (nominal, at 10V excitation) —
Excitation Voltage 10 V (typical), 16 V (maximum) —
Linearity 0.1% of full-scale (typical) —
동작 온도 범위 0 C to +85 C —
Storage Temperature Range [DATA_NEEDED: storage temperature range] —
패키지 / 케이스 4-SIP Module (Case 344-15) 4-SIP Module
실장 유형 Through-Hole Through-Hole
핀 수 4 —
On-Chip Temperature Compensation Yes (laser trimmed) —
Bridge Configuration 4-arm piezoresistive Wheatstone —
RoHS 상태 [DATA_NEEDED: RoHS status from ST datasheet] [DATA_NEEDED: RoHS status of this lot]
Sensor Family MPX2010 / MPXV2010G / MPXM2010 —
Diaphragm Type Single monolithic silicon —
Operating Pressure — 1.45 PSI (10 kPa)
Maximum Pressure — [DATA_NEEDED: maximum overpressure rating]
출력 전압 — 0 mV to 25 mV at 10 V excitation
공급 전압 — 10 V to 16 V
Accuracy — +/-1% (per data brief)
Port Size — Male - 0.19" (4.93 mm) Tube
Port Style — Barbed, single vented-gauge port
동작 온도 — -40C to +125C (per MPX2010 series datasheet)
Technology — Piezoresistive (silicon diaphragm)
Compensation — On-chip temperature compensated and calibrated

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