MPXV2102GP vs MPXV2010GP 비교

다음의 상세 나란히 비교: MPXV2102GP 제조: NXP Semiconductors 및 MPXV2010GP 제조: STMicroelectronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

NXP Semiconductors
MPXV2102GP MPXV2102GP - 100 kPa Gage Pressure Sensor | NXP

MPXV2102GP - 100 kPa Gage Pressure Sensor | NXP

MPXV2102GP ⚠ 최종 구매

사양 비교

파라미터 MPXV2102GP MPXV2010GP
브랜드 NXP Semiconductors STMicroelectronics
카테고리 Pressure Sensors Pressure Sensors
수명 주기 상태 최종 구매 활성
재고 상태 In Stock In Stock
단가 (USD) $5.60 $8.62
Pressure Type Vented Gauge Vented Gauge
Operating Pressure Range 0 kPa to 100 kPa (0 to 14.5 PSI) 0 kPa to 10 kPa
Maximum Overpressure [DATA_NEEDED: maximum overpressure rating] —
Supply Voltage (Excitation) 10 V DC typical —
Full-Scale Output (Typical) 40 mV at 10 V —
Sensitivity (Typical) 0.4 mV/kPa —
Offset (Trimmed) ±1 mV (after laser trim) —
Linearity ±0.25% of span (typ) —
동작 온도 -40 °C to +125 °C -40 C to +125 C
Storage Temperature [DATA_NEEDED: storage temperature] —
Input Resistance (Bridge) 400 Ω typical —
Output Resistance (Bridge) [DATA_NEEDED: output resistance] —
Response Time [DATA_NEEDED: response time] 1.0 ms (typical)
패키지 / 케이스 8-SMD, Gull Wing, Side Port (SOP 8, case 1735) —
Port Size 0.13" (3.17 mm) Tube —
실장 유형 Surface Mount Surface Mount
RoHS 상태 Compliant Compliant
Technology Piezoresistive (silicon strain gauge Wheatstone bridge) Silicon piezoresistive MEMS, on-chip temp compensated
Maximum Overload Pressure — 75 kPa
Supply Voltage (Vex) — 10 V typical (max 16 V)
Full-Scale Output (Span) at 10 V — 25 mV nominal at 10 kPa
Zero Pressure Output (Offset) — 0 mV to 1.0 mV
Pressure Hysteresis — 1.0 kPa (typical)
Sensitivity — 2.5 mV/kPa nominal at 10 V
출력 유형 — Analog, ratiometric, mV output
Port Configuration — Single vertical side port, 0.13" (3.17 mm) tube
패키지 — 8-SMD, Gull Wing, Side Port (Case 344B-01)

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