MRF5S19060NBR1 vs MRF5S19060NR1 비교
다음의 상세 나란히 비교: MRF5S19060NBR1 제조: NXP Semiconductors 및 MRF5S19060NR1 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | MRF5S19060NBR1 | MRF5S19060NR1 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | RF Transceivers |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $25.40 | $17.95 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | — |
| 트랜지스터 유형 | N-Channel Enhancement-Mode Lateral MOSFET (LDMOS RF Power) | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Configuration | Dual Die (2 x N), Common Source | Single, Common-Source |
| Frequency Band | 1930 MHz to 1990 MHz | — |
| Output Power (P1dB) | 60 W (CW/peak) | — |
| Output Power (Average) | 12 W avg. | 12 W |
| Drain Supply Voltage | 28 V (typical) | — |
| Drain-Source Voltage (Vdss) | 65 V (max) | — |
| Power Gain | 14 dB at 1.99 GHz | — |
| Drain Current | 750 mA (typical operating DC) | — |
| 패키지 | TO-272 WB-4 (overmolded plastic) | — |
| 실장 유형 | Surface Mount (SMD) | — |
| 핀 수 | 5 | — |
| Peak Reflow Temperature | 260 C | — |
| Maximum Power Dissipation (Absolute) | 218.8 W | — |
| Technology | Silicon LDMOS | — |
| RoHS 상태 | [DATA_NEEDED: RoHS compliance status] | Compliant |
| MSL 레벨 | [DATA_NEEDED: MSL moisture sensitivity level] | — |
| Frequency Range | — | 1930 MHz to 1990 MHz |
| Typical Gain | — | 14 dB at 1.99 GHz |
| Drain-Source Voltage (Rated) | — | 65 V |
| Test Supply Voltage | — | 28 V |
| Test Quiescent Current | — | 750 mA |
| 패키지 / 케이스 | — | TO-270 WB-4 (over-molded plastic, 4-lead) |
| 장착 스타일 | — | Surface Mount |
| Application | — | Base station / broadband commercial amplifier |
| 핀 수 | — | 5 |
| Lead Free Status | — | Lead Free |
| Operating Mode | — | Class AB (typical RF PA) |