MRF6VP41KHR5 vs MRF6VP21KHR5 비교
다음의 상세 나란히 비교: MRF6VP41KHR5 제조: NXP Semiconductors 및 MRF6VP21KHR5 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | MRF6VP41KHR5 | MRF6VP21KHR5 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $229.50 | $220.00 |
| Manufacturer | NXP Semiconductors | — |
| Part Status | Active | — |
| 트랜지스터 유형 | N-Channel Lateral MOSFET | N-Channel Enhancement-Mode RF MOSFET (LDMOS) |
| Technology | MOSFET (Metal-Oxide Semiconductor) | Laterally Diffused MOS (LDMOS) - VHV6 family |
| Frequency Range | 10 MHz to 500 MHz | — |
| Drain-Source Voltage (Vds) | 50 V | — |
| Test Frequency | 450 MHz | — |
| Output Power (Pout) | 1000 W | — |
| Power Gain (Gp) | 20 dB | — |
| Drain Current (Id) | 150 mA (operating idle current) | — |
| 패키지 / 케이스 | NI-1230 | NI-1230-4H (5-pin ceramic flange) |
| 실장 유형 | Chassis Mount (flange) | Flange mount with screws to heatsink |
| Operating Temperature (Max) | 225 C | — |
| Peak Reflow Temperature | 260 C | 260 °C (max 40 s) |
| Maximum Time at Peak Reflow | 40 s | — |
| RoHS 상태 | [DATA_NEEDED: RoHS compliance status] | [DATA_NEEDED: RoHS compliance status] |
| Configuration | Single | — |
| Drain-Source Voltage (Vdss) Max | — | 110 V |
| Continuous Drain Current | — | [DATA_NEEDED: continuous drain current Id] |
| Pulsed Output Power (Pout) at 235 MHz | — | 1000 W (typical, pulsed) |
| Operating Frequency Range | — | Up to 235 MHz |
| Power Gain (Gps) at 235 MHz | — | 24 dB (nominal, common-source) |
| Test Conditions | — | 50 V supply, pulsed RF service |
| Drain Efficiency (Typ) | — | [DATA_NEEDED: drain efficiency %] |
| Input/Output Matching | — | Unmatched (discrete matching network required) |
| Maximum Operating Temperature | — | 225 °C (package rating) |
| Operating Mode | — | Enhancement mode |
| Channel Polarity | — | N-Channel |
| MSL 레벨 | — | [DATA_NEEDED: MSL rating] |