MRF8S21100HR5 vs MRF8HP21080HR5 비교
다음의 상세 나란히 비교: MRF8S21100HR5 제조: NXP Semiconductors 및 MRF8HP21080HR5 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | MRF8S21100HR5 | MRF8HP21080HR5 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | Obsolete | Obsolete |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $61.75 | $88.00 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors (formerly Freescale Semiconductor) |
| 트랜지스터 유형 | N-Channel RF Power MOSFET | LDMOS, N-Channel, Dual (2 elements) |
| Polarity | N-Channel | — |
| Operating Mode | Enhancement | — |
| Technology | LDMOS (HV8 generation) | W-CDMA, LTE Lateral N-Channel RF Power MOSFET |
| Drain-Source Breakdown Voltage V(BR)DSS | 65 V | — |
| Test Voltage (Drain) | 28 V | — |
| Test Current | 700 mA | 150 mA |
| Frequency of Operation | 2.17 GHz (max, typical 2110-2170 MHz) | — |
| Power Gain | 18.3 dB at 2.17 GHz | 14.4 dB at 2.17 GHz |
| Output Power (P1dB / pulsed) | 100 W | — |
| Output Power (typical application) | 24 W | — |
| 패키지 | NI-780H-2L (Case 465-06), 2-pin ceramic flange | — |
| 실장 유형 | Surface Mount / Flange Mount | Flange Mount / Chassis Mount |
| RoHS 상태 | RoHS Compliant | — |
| Operating Class | Class AB, Class C | — |
| Application | W-CDMA, LTE cellular base station | — |
| Configuration | — | Common Source, 2 Elements |
| Frequency | — | 2.17 GHz (2110–2170 MHz cellular band) |
| Test Voltage | — | 28 V |
| Output Power (Avg.) | — | 16 W (W-CDMA/LTE) |
| Drain-Source Voltage Rating | — | 65 V |
| 패키지 / 케이스 | — | NI-780-4 (Case 465M) |
| Number of Terminals | — | 4 |
| Surface Mount | — | No (flange mount) |
| Peak Reflow Temperature | — | 260 C (not applicable - flange mount) |
| Part Status (DigiKey) | — | Discontinued at Digi-Key |