MT25QU256ABA8E12-0AUT vs MT25QU01GBBB8E12-0AUT 비교

다음의 상세 나란히 비교: MT25QU256ABA8E12-0AUT 제조: Micron Technology 및 MT25QU01GBBB8E12-0AUT 제조: Micron Technology. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Micron Technology
MT25QU256ABA8E12-0AUT MT25QU256ABA8E12-0AUT - 256Mbit SPI NOR Flash 166MHz | Micron

MT25QU256ABA8E12-0AUT - 256Mbit SPI NOR Flash 166MHz | Micron

MT25QU256ABA8E12-0AUT ✓ 활성
Micron Technology
MT25QU01GBBB8E12-0AUT MT25QU01GBBB8E12-0AUT - 1Gb SPI NOR Flash 133MHz | Micron

MT25QU01GBBB8E12-0AUT - 1Gb SPI NOR Flash 133MHz | Micron

MT25QU01GBBB8E12-0AUT ✓ 활성

사양 비교

파라미터 MT25QU256ABA8E12-0AUT MT25QU01GBBB8E12-0AUT
브랜드 Micron Technology Micron Technology
카테고리 Memory ICs Memory ICs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $3.95 $7.10
메모리 유형 NOR Flash - Serial (SPI) NOR Flash, Serial (SPI)
Density 256 Mbit (32 MB) 1 Gbit (128 MB)
인터페이스 SPI - Quad I/O SPI, Dual SPI, Quad SPI
Max Clock Frequency 166 MHz 133 MHz
Access Time 5 ns 6 ns
공급 전압 1.8 V (1.70 V to 2.00 V) 1.8 V
메모리 구성 64M x4 (TLBGA ballout) x1 / x2 / x4 (I/O width)
패키지 24-T-PBGA (6x8 mm) 24-T-PBGA (6x8 mm)
실장 유형 Surface Mount Surface Mount
Grade Automotive (-AUT ordering code) —
동작 온도 [DATA_NEEDED: Operating Temperature] -40C to +125C
Write Cycle Endurance [DATA_NEEDED: Write Cycle Endurance] —
Data Retention [DATA_NEEDED: Data Retention] [DATA_NEEDED: retention years]
Program/Erase Speed [DATA_NEEDED: Program/Erase Speed] —
Quiescent Standby Current [DATA_NEEDED: Standby Current] —
RoHS 상태 [DATA_NEEDED: RoHS Status] [DATA_NEEDED: RoHS status]
MSL 레벨 [DATA_NEEDED: Moisture Sensitivity Level] [DATA_NEEDED: MSL level]
FBGA Code — RW320
Automotive Qualification — AEC-Q100 qualified
Write Protection — Hardware write protection; Software write protection; Write enable latch
Product Longevity Program — No
Program/Erase Endurance — [DATA_NEEDED: endurance cycles]

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