MW7IC2040NBR1 vs MW7IC2240NR1 비교

다음의 상세 나란히 비교: MW7IC2040NBR1 제조: NXP Semiconductors 및 MW7IC2240NR1 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

NXP Semiconductors
MW7IC2240NR1 MW7IC2240NR1 - 4W W-CDMA RF LDMOS PA, 2110-2170 MHz | NXP

MW7IC2240NR1 - 4W W-CDMA RF LDMOS PA, 2110-2170 MHz | NXP

MW7IC2240NR1 ✓ 활성

사양 비교

파라미터 MW7IC2040NBR1 MW7IC2240NR1
브랜드 NXP Semiconductors NXP Semiconductors
카테고리 RF Amplifiers RF Amplifiers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $15.20 $13.16
RF Type General Purpose —
Frequency Range 1930 MHz to 1990 MHz (PCS) / 1805 MHz to 1880 MHz (DCS) 2110 MHz to 2170 MHz (usable 2000-2200 MHz)
Test Frequency 1990 MHz —
Gain 23.5 dB (typ at 1990 MHz) —
Output Power (P1dB/avg) 4 W (family rating) —
공급 전압 24 V to 32 V —
Quiescent Supply Current 75 mA (typ) —
패키지 / 케이스 TO-272-16 Variant, Flat Leads —
실장 유형 Surface Mount Surface Mount / flange mount with ground pad
Technology RF LDMOS (later-generation, on-chip matching) LDMOS (Laterally Diffused MOSFET)
Number of Functions 1 (multi-stage integrated PA) —
동작 온도 [DATA_NEEDED: operating temperature range] —
Storage Temperature [DATA_NEEDED: storage temperature range] —
Modulation Support W-CDMA, GSM, EDGE, CW —
RoHS 상태 Compliant (per ETEI / distributor data) —
기능 — RF Power Amplifier (W-CDMA, multi-stage)
Average Output Power — 4 W (W-CDMA, 28 V)
Power Gain (Min) — 15 dB
Drain Supply Voltage — 24 V to 32 V (28 V typical)
Input VSWR — 5:1
Output VSWR — 5:1
Nominal Impedance — 50 ohm (DC-blocked input, >3 ohm output)
Spurious Emissions — Below -60 dBc from 100 mW to 10 W CW Pout
On-Chip Matching — Yes (input 50 ohm DC-blocked, partial output)
Quiescent Current Compensation — Integrated with temperature compensation
Enable Function — Yes
패키지 — TO-270 WBL-16 (TO-270WB16), 16-pin ceramic
Operating Modulation Formats — W-CDMA, TD-SCDMA, LTE-FDD, multi-carrier

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