MW7IC2220NBR1 vs MW7IC2040NBR1 비교

다음의 상세 나란히 비교: MW7IC2220NBR1 제조: NXP Semiconductors 및 MW7IC2040NBR1 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

NXP Semiconductors
MW7IC2220NBR1 MW7IC2220NBR1 - 2W W-CDMA RF Power Amplifier 2.11-2.17 GHz | NXP

MW7IC2220NBR1 - 2W W-CDMA RF Power Amplifier 2.11-2.17 GHz | NXP

MW7IC2220NBR1 ✓ 활성

사양 비교

파라미터 MW7IC2220NBR1 MW7IC2040NBR1
브랜드 NXP Semiconductors NXP Semiconductors
카테고리 RF Amplifiers RF Amplifiers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $21.50 $15.20
Technology RF LDMOS (Laterally Diffused MOSFET) RF LDMOS (later-generation, on-chip matching)
기능 W-CDMA Wideband Integrated Power Amplifier —
Frequency Range 2000 MHz to 2200 MHz (usable), 2110-2170 MHz (W-CDMA band) 1930 MHz to 1990 MHz (PCS) / 1805 MHz to 1880 MHz (DCS)
Operating Frequency (typical) 2167.5 MHz —
Average Output Power 2 W (33 dBm) —
Drain Supply Voltage (VDD) 28 V (24 V to 32 V operating range) —
Small-Signal Gain 31 dB (typical at 2.17 GHz) —
Quiescent Current Stage 1 (IDQ1) 80 mA —
Quiescent Current Stage 2 (IDQ2) 300 mA —
Package Type TO-272WB-16 (over-molded plastic) —
Input Matching On-chip (50 ohm nominal) —
Output Matching On-chip (50 ohm nominal) —
Characteristic Impedance 50 ohm —
Maximum Operating Temperature 150 C —
실장 유형 Surface Mount (flange/over-molded) Surface Mount
Modulation Support W-CDMA, TD-SCDMA, LTE, multi-carrier W-CDMA, GSM, EDGE, CW
Test Signal Single-Carrier W-CDMA, IQ Magnitude Clipping, PAR = 7.5 dB —
ACPR Measurement 3.84 MHz channel bandwidth at +/-5 MHz offset —
RF Type — General Purpose
Test Frequency — 1990 MHz
Gain — 23.5 dB (typ at 1990 MHz)
Output Power (P1dB/avg) — 4 W (family rating)
공급 전압 — 24 V to 32 V
Quiescent Supply Current — 75 mA (typ)
패키지 / 케이스 — TO-272-16 Variant, Flat Leads
Number of Functions — 1 (multi-stage integrated PA)
동작 온도 — [DATA_NEEDED: operating temperature range]
Storage Temperature — [DATA_NEEDED: storage temperature range]
RoHS 상태 — Compliant (per ETEI / distributor data)

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