MW7IC2240NR1 vs MW7IC2040NBR1 비교

다음의 상세 나란히 비교: MW7IC2240NR1 제조: NXP Semiconductors 및 MW7IC2040NBR1 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

NXP Semiconductors
MW7IC2240NR1 MW7IC2240NR1 - 4W W-CDMA RF LDMOS PA, 2110-2170 MHz | NXP

MW7IC2240NR1 - 4W W-CDMA RF LDMOS PA, 2110-2170 MHz | NXP

MW7IC2240NR1 ✓ 활성

사양 비교

파라미터 MW7IC2240NR1 MW7IC2040NBR1
브랜드 NXP Semiconductors NXP Semiconductors
카테고리 RF Amplifiers RF Amplifiers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $13.16 $15.20
기능 RF Power Amplifier (W-CDMA, multi-stage) —
Technology LDMOS (Laterally Diffused MOSFET) RF LDMOS (later-generation, on-chip matching)
Frequency Range 2110 MHz to 2170 MHz (usable 2000-2200 MHz) 1930 MHz to 1990 MHz (PCS) / 1805 MHz to 1880 MHz (DCS)
Average Output Power 4 W (W-CDMA, 28 V) —
Power Gain (Min) 15 dB —
Drain Supply Voltage 24 V to 32 V (28 V typical) —
Input VSWR 5:1 —
Output VSWR 5:1 —
Nominal Impedance 50 ohm (DC-blocked input, >3 ohm output) —
Spurious Emissions Below -60 dBc from 100 mW to 10 W CW Pout —
On-Chip Matching Yes (input 50 ohm DC-blocked, partial output) —
Quiescent Current Compensation Integrated with temperature compensation —
Enable Function Yes —
패키지 TO-270 WBL-16 (TO-270WB16), 16-pin ceramic —
Operating Modulation Formats W-CDMA, TD-SCDMA, LTE-FDD, multi-carrier —
실장 유형 Surface Mount / flange mount with ground pad Surface Mount
RF Type — General Purpose
Test Frequency — 1990 MHz
Gain — 23.5 dB (typ at 1990 MHz)
Output Power (P1dB/avg) — 4 W (family rating)
공급 전압 — 24 V to 32 V
Quiescent Supply Current — 75 mA (typ)
패키지 / 케이스 — TO-272-16 Variant, Flat Leads
Number of Functions — 1 (multi-stage integrated PA)
동작 온도 — [DATA_NEEDED: operating temperature range]
Storage Temperature — [DATA_NEEDED: storage temperature range]
Modulation Support — W-CDMA, GSM, EDGE, CW
RoHS 상태 — Compliant (per ETEI / distributor data)

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