PS5012-E12S vs PS5037-E37T 비교

다음의 상세 나란히 비교: PS5012-E12S 제조: NI 및 PS5037-E37T 제조: NI. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 PS5012-E12S PS5037-E37T
브랜드 NI NI
카테고리 Memory ICs Logic ICs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.00 $0.00
Product Type PCIe Gen3 x4 NVMe SSD controller —
Host Interface PCI Express Gen3 x4 —
PCIe Gen3 Line Rate 8 GT/s per lane —
Backward-Compatible PCIe Rates 2.5 GT/s Gen1 and 5 GT/s Gen2 —
PCI Express Compliance PCI Express Base Specification Revision 3.1 —
NVMe Compliance NVMe 1.3 —
Processor Architecture Dual-CPU with built-in 32-bit microcontroller —
Process Technology TSMC 28 nm —
NAND Channel Count Up to 8 channels —
Supported Form Factors M.2 2280-S2 and M.2 2280-D2 M.2 2280, 2242, 2230 (single-sided)
동작 온도 범위 0°C to 70°C —
Documented Sequential Read Performance Up to 3400 MB/s, dependent on capacity and system configuration —
Documented Capacity Range 500 GB to 8000 GB —
Documented NAND Types TLC and 3D QLC —
Controller Package [DATA_NEEDED: package type and dimensions] —
Power Consumption [DATA_NEEDED: operating and idle power consumption] —
RoHS 상태 [DATA_NEEDED: RoHS status] —
REACH Status [DATA_NEEDED: REACH status] —
Lead-Free Status [DATA_NEEDED: lead-free status] —
Interface (Host) — PCIe 5.0 x4 NVMe
NVMe Specification — NVMe 2.0
NAND Interface Channels — 4 channels
NAND Interface Speed — 4800 MT/s
DRAM Support — DRAM-less (HMB supported)
Sequential Read (max) — 14.9 GB/s
Sequential Write (max) — 13.2 GB/s
Random Read IOPS (4KB, max) — 3000K IOPS
Random Write IOPS (4KB, max) — [DATA_NEEDED: Random write IOPS]
Active Power (typical) — < 2.3 W
Active Power (peak demonstrated) — 4.5 W
NAND Compatibility — 3D TLC/QLC (toggle / ONFi)
동작 온도 — [DATA_NEEDED: Operating temperature range]
Package Type — BGA (single-sided, SSD controller)
Production Status — Sampling / reference design demonstrated (CES 2026 / Computex 2026)
Manufacturer — Phison Electronics
RoHS Compliance — [DATA_NEEDED: RoHS status]

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