RTAX1000S-1LG624V vs RTAX2000S-1LG624V 비교
다음의 상세 나란히 비교: RTAX1000S-1LG624V 제조: Microchip Technology 및 RTAX2000S-1LG624V 제조: Microchip Technology. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Microchip Technology
RTAX1000S-1LG624V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000S-1LG624V ✓ 활성Microchip Technology
RTAX2000S-1LG624V - 2M-Gate Rad-Tolerant Antifuse FPGA | Microchip
RTAX2000S-1LG624V ✓ 활성사양 비교
| 파라미터 | RTAX1000S-1LG624V | RTAX2000S-1LG624V |
|---|---|---|
| 브랜드 | Microchip Technology | Microchip Technology |
| 카테고리 | FPGA & CPLD | FPGA & CPLD |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $3,600.00 | $0.00 |
| Equivalent System Gates | 1000000 | 2,000,000 gates |
| Logic Cells | 18144 | — |
| CLBs | 12096 | — |
| Maximum User I/Os | 418 | — |
| Embedded Memory | Up to 540 kbits SRAM with optional EDAC | Up to 540 kbits SRAM with optional EDAC protection |
| Technology | CMOS antifuse (one-time programmable) | — |
| Total Ionizing Dose (Functional) | 300 krad (Si) | — |
| Total Ionizing Dose (Parametric) | 200 krad (Si) | — |
| SEU Rate | Less than 1E-10 errors per bit-day | — |
| Combinatorial Delay (max) | 0.93 ns | — |
| Speed Grade | -1 | -1 |
| 패키지 | LG624 (624-ball ceramic column grid array) | CG624, 624-pin ceramic column grid array |
| Configuration | Nonvolatile, live at power-up, single chip | Single-chip, live at power-up (no boot device required) |
| Radiation Tolerance Class | Rad-tolerant (space flight) | — |
| Architecture Family | RTAX-S (based on Axcelerator) | — |
| 실장 유형 | Surface Mount | Surface Mount |
| Screening | [DATA_NEEDED: screening flow per order code suffix] | — |
| Supply Voltage (Core) | [DATA_NEEDED: core supply voltage] | — |
| 동작 온도 | [DATA_NEEDED: operating temperature range] | — |
| RoHS 상태 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Configurable Logic Blocks (CLBs) | — | 21,504 |
| User I/Os (maximum, family) | — | Up to 684 |
| Total Ionizing Dose (TID), functional | — | 300 krad (Si) |
| Total Ionizing Dose (TID), parametric | — | 200 krad (Si) |
| SEU Immunity | — | Less than 1E-10 errors per bit-day |
| Programming Technology | — | One-time programmable antifuse, nonvolatile |
| Process Technology | — | Digital CMOS |
| Package Temperature Suffix | — | V (space/military screening variant) |
| Family Lineage | — | RTAX-S/SL, based on commercial Axcelerator family |
| 동작 온도 범위 | — | [DATA_NEEDED: operating temperature range] |
| Core Supply Voltage | — | [DATA_NEEDED: core supply voltage] |