RTAX2000S-1LG624V vs RTAX1000S-1LG624V 비교
다음의 상세 나란히 비교: RTAX2000S-1LG624V 제조: Microchip Technology 및 RTAX1000S-1LG624V 제조: Microchip Technology. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Microchip Technology
RTAX2000S-1LG624V - 2M-Gate Rad-Tolerant Antifuse FPGA | Microchip
RTAX2000S-1LG624V ✓ 활성Microchip Technology
RTAX1000S-1LG624V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000S-1LG624V ✓ 활성사양 비교
| 파라미터 | RTAX2000S-1LG624V | RTAX1000S-1LG624V |
|---|---|---|
| 브랜드 | Microchip Technology | Microchip Technology |
| 카테고리 | FPGA & CPLD | FPGA & CPLD |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.00 | $3,600.00 |
| Equivalent System Gates | 2,000,000 gates | 1000000 |
| Configurable Logic Blocks (CLBs) | 21,504 | — |
| User I/Os (maximum, family) | Up to 684 | — |
| Embedded Memory | Up to 540 kbits SRAM with optional EDAC protection | Up to 540 kbits SRAM with optional EDAC |
| Total Ionizing Dose (TID), functional | 300 krad (Si) | — |
| Total Ionizing Dose (TID), parametric | 200 krad (Si) | — |
| SEU Immunity | Less than 1E-10 errors per bit-day | — |
| Programming Technology | One-time programmable antifuse, nonvolatile | — |
| Configuration | Single-chip, live at power-up (no boot device required) | Nonvolatile, live at power-up, single chip |
| Process Technology | Digital CMOS | — |
| Speed Grade | -1 | -1 |
| 패키지 | CG624, 624-pin ceramic column grid array | LG624 (624-ball ceramic column grid array) |
| Package Temperature Suffix | V (space/military screening variant) | — |
| Family Lineage | RTAX-S/SL, based on commercial Axcelerator family | — |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 범위 | [DATA_NEEDED: operating temperature range] | — |
| Core Supply Voltage | [DATA_NEEDED: core supply voltage] | — |
| RoHS 상태 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Logic Cells | — | 18144 |
| CLBs | — | 12096 |
| Maximum User I/Os | — | 418 |
| Technology | — | CMOS antifuse (one-time programmable) |
| Total Ionizing Dose (Functional) | — | 300 krad (Si) |
| Total Ionizing Dose (Parametric) | — | 200 krad (Si) |
| SEU Rate | — | Less than 1E-10 errors per bit-day |
| Combinatorial Delay (max) | — | 0.93 ns |
| Radiation Tolerance Class | — | Rad-tolerant (space flight) |
| Architecture Family | — | RTAX-S (based on Axcelerator) |
| Screening | — | [DATA_NEEDED: screening flow per order code suffix] |
| Supply Voltage (Core) | — | [DATA_NEEDED: core supply voltage] |
| 동작 온도 | — | [DATA_NEEDED: operating temperature range] |