RTAX4000D-CQ352B vs RTAX4000D-CQ352V 비교

다음의 상세 나란히 비교: RTAX4000D-CQ352B 제조: Microchip Technology 및 RTAX4000D-CQ352V 제조: Microchip Technology. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Microchip Technology
RTAX4000D-CQ352B RTAX4000D-CQ352B - 4M-Gate Rad-Tolerant FPGA CQFP-352 | Microchip

RTAX4000D-CQ352B - 4M-Gate Rad-Tolerant FPGA CQFP-352 | Microchip

RTAX4000D-CQ352B ✓ 활성
Microchip Technology
RTAX4000D-CQ352V RTAX4000D-CQ352V - 4M-Gate Rad-Tolerant FPGA | Microchip Technology

RTAX4000D-CQ352V - 4M-Gate Rad-Tolerant FPGA | Microchip Technology

RTAX4000D-CQ352V ✓ 활성

사양 비교

파라미터 RTAX4000D-CQ352B RTAX4000D-CQ352V
브랜드 Microchip Technology Microchip Technology
카테고리 FPGA & CPLD FPGA & CPLD
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.00 $0.00
Logic Cells 55,440 55,440
Configurable Logic Blocks (CLBs) 36,960 —
Equivalent Gates 4,000,000 —
System Gates (cells, per Jotrin listing) 33,600 —
Family RTAX-DSP (RTAX-S/SL/DSP) RTAX-S/SL and RTAX-DSP radiation-tolerant FPGAs
Process Technology 0.15 um —
Core Supply Voltage 1.5 V (1.425 V to 1.575 V) [DATA_NEEDED: core voltage]
Combinatorial CLB Delay [DATA_NEEDED: combinatorial CLB delay for standard speed grade; 0.99 ns max is specified for the -1 speed grade variant] —
Technology Type Antifuse, one-time programmable, radiation-tolerant —
패키지 352-pin Ceramic CQFP (CQFP-352) CQ352 ceramic column grid array
실장 유형 Surface Mount Surface Mount
Configuration Live at power-up, single chip, no external configuration memory —
Radiation Tolerance Radiation-tolerant (space-flight qualified family) [DATA_NEEDED: TID and SEE ratings]
Application Domain Space flight systems Space flight systems (radiation-tolerant)
Programmability OTP (one-time programmable antifuse) —
RoHS 상태 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
동작 온도 [DATA_NEEDED: operating temperature range] —
Equivalent System Gates — 4,000,000 gates
CLB Organization — 36,960 CLBs
Number of User I/Os — 166
Technology — Digital, CMOS
Programmability Type — Antifuse (OTP), live at power-up
Embedded Memory — Embedded SRAM with built-in FIFO control logic
Clocking — Segmentable clocks, chip-wide highway routing
Operating Temperature Min — -55 C
Operating Temperature Max — +125 C

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