UCC21530Q-Q1 vs UCC21550 비교

다음의 상세 나란히 비교: UCC21530Q-Q1 제조: Texas Instruments 및 UCC21550 제조: Texas Instruments. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Texas Instruments
UCC21530Q-Q1 UCC21530Q-Q1 - 4A/6A 5.7kVRMS Isolated Gate Driver | TI

UCC21530Q-Q1 - 4A/6A 5.7kVRMS Isolated Gate Driver | TI

UCC21530Q-Q1 ✓ 활성
Texas Instruments
UCC21550 UCC21550 - 4A/6A 5kVrms Isolated Dual Gate Driver | TI

UCC21550 - 4A/6A 5kVrms Isolated Dual Gate Driver | TI

UCC21550 ✓ 활성

사양 비교

파라미터 UCC21530Q-Q1 UCC21550
브랜드 Texas Instruments Texas Instruments
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $2.10 $1.25
Output Peak Current (Source) 4 A —
Output Peak Current (Sink) 6 A —
Isolation Rating 5.7 kVRMS (reinforced) 5000 Vrms (reinforced, UL1577)
Channel-to-Channel Spacing 3.3 mm —
CMTI (Common-Mode Transient Immunity) 125 V/ns (minimum) —
Maximum Switching Frequency 5 MHz —
Number of Channels 2 —
Configuration Low-side, high-side, half-bridge, dual low-side —
Dead Time Programmable via DT pin resistor Programmable via DT pin resistor
인에이블 핀 Yes —
Input Threshold TTL and CMOS compatible —
Driven Device Types IGBT, Si MOSFET, SiC MOSFET —
Qualification AEC-Q100 (automotive) —
패키지 SOIC-14 (DWK) 16-SOIC (DW, 300 mil)
실장 유형 Surface Mount Surface Mount
Supply Voltage VDDI [DATA_NEEDED: VDDI range] —
동작 온도 [DATA_NEEDED: temperature range] -40C to +150C
RoHS 상태 Compliant Compliant
채널 수 — 2 (dual-channel)
Peak Source Current — 4 A
Peak Sink Current — 6 A
Isolation Technology — Capacitive (silicon dioxide)
Configurations — Dual low-side, dual high-side, or half-bridge
Supported Transistors — MOSFET, SiC, GaN, IGBT
UVLO — Yes, on input and output supplies (A/B/C grade options)
Automotive Qualification — UCC21550x-Q1 family AEC-Q100 qualified
CMTI — [DATA_NEEDED: common-mode transient immunity]
Propagation Delay — [DATA_NEEDED: typical propagation delay]

데이터시트 & 자료

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