ULN2803APGOM vs ULN2803ADWR 비교
다음의 상세 나란히 비교: ULN2803APGOM 제조: Toshiba 및 ULN2803ADWR 제조: Texas Instruments. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | ULN2803APGOM | ULN2803ADWR |
|---|---|---|
| 브랜드 | Toshiba | Texas Instruments |
| 카테고리 | Transistors | Transistors |
| 수명 주기 상태 | 활성 | 최종 구매 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.05 | $0.38 |
| Number of Channels | 8 | 8 |
| 트랜지스터 유형 | 8x NPN Darlington (open-collector sink) | — |
| 컬렉터-이미터 전압 (Vceo) | 50 V | — |
| Continuous Collector Current (IC) | 500 mA per channel | — |
| Peak Collector Current (ICP) | [DATA_NEEDED: peak collector current per channel] | — |
| DC Current Gain (hFE) | 2000 typ at low IC (Darlington cascade) | [DATA_NEEDED: minimum hFE at rated current] |
| Input Base Resistor | 2.7 kOhm (5 V CMOS-compatible) | — |
| Clamp Diodes | Integral free-wheeling diodes on all 8 channels | — |
| 패키지 | PDIP-18 (DIP-18, 300 mil, through-hole) | 18-SOIC (DW), 7.5 mm body width |
| Total Package Dissipation (PD) | 2.25 W at 25 C ambient | — |
| 동작 온도 범위 | -40 C to +85 C | -40 C to +85 C |
| Storage Temperature Range | -55 C to +150 C | — |
| 실장 유형 | Through Hole (THT) | Surface Mount |
| MSL 레벨 | Not applicable (through-hole) | 1 (unlimited) |
| Lead-Free / RoHS Status | Compliant (verify per lot) | — |
| Manufacturer | Toshiba | — |
| Marking Suffix | (O,M) indicates Toshiba factory packaging/tray code | — |
| 토폴로지 | — | 8-channel NPN Darlington array (sink driver) |
| Collector-Emitter Voltage (VCEO max) | — | 50 V |
| Continuous Collector Current (per channel) | — | 500 mA |
| Input Base Resistor (per channel) | — | 2.7 kOhm |
| Output Clamp Diodes | — | 8 integrated, common-cathode to COM pin |
| Logic Compatibility | — | TTL / 5 V CMOS (also accepts 3.3 V) |
| Output Saturation Voltage (VCE(sat)) | — | [DATA_NEEDED: typical value at rated current] |
| Lead-Free / RoHS | — | Yes / Compliant |
| Datasheet Document | — | ULN2803A datasheet (LRS049E family, revised July 2006 per TI) |