VNQ660SPTR-E vs VNQ660SP-E 비교

다음의 상세 나란히 비교: VNQ660SPTR-E 제조: STMicroelectronics 및 VNQ660SP-E 제조: STMicroelectronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 VNQ660SPTR-E VNQ660SP-E
브랜드 STMicroelectronics STMicroelectronics
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $5.37 $1.45
기능 Quad-channel high-side solid-state relay —
Technology ST VIPower M0-3 (vertical DMOS) STMicroelectronics VIPower M0-3
Number of Channels 4 4 (Quad)
Switch Type High-side N-channel power MOSFET —
Supply Voltage (VCC) 6 V to 36 V —
Maximum Continuous Output Current (per channel) 6 A —
On-State Resistance (RDS(on)) 40 mOhm typical (per channel) 40 mOhm per channel (typical)
Input Compatibility CMOS logic-level inputs —
Protection Features Thermal shutdown, overvoltage clamp, undervoltage shutdown, open-load detection (off state), reverse battery protection —
Status Feedback Analog status flag per channel —
Off-State Quiescent Current [DATA_NEEDED: standby Iq] —
동작 온도 -40 C to +125 C [DATA_NEEDED: operating temperature range]
패키지 PowerSO-10 with exposed bottom pad PowerSO-10 (Exposed Bottom Pad)
실장 유형 Surface Mount Surface Mount
Maximum Power Dissipation 113.6 W (with proper thermal design) —
RoHS 상태 Compliant Compliant
토폴로지 — High-Side Switch (Solid State Relay)
Supply Voltage (Vcc) — 6 V to 36 V
Output Current per Channel — 6 A continuous
Output Current (Peak) — [DATA_NEEDED: peak current per channel]
Input Type — CMOS-compatible logic inputs
Off-State Open-Load Detection — Yes
Undervoltage Shutdown — Yes
Overvoltage Shutdown / Clamp — Yes
열 차단 — Yes
Current Limitation — Yes
턴온 지연 시간 — 40 us (typ)

데이터시트 & 자료

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