AUIRFB8409 - 40V 195A 0.97mΩ Auto MOSFET TO-220 | Infineon
부품 번호: AUIRFB8409 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $4.2 | $4.20 |
| 10 | $3.65 | $36.50 |
| 100 | $3.05 | $305.00 |
| 500 | $2.55 | $1,275.00 |
| 1,000 | $2.1 | $2,100.00 |
| 3,000 | $1.8 | $5,400.00 |
AUIRFB8409 개요
An automotive-grade power MOSFET is a discrete semiconductor switch designed and qualified to AEC-Q101 stress-test criteria, providing higher reliability under temperature cycling, humidity, and vibration than commercial-grade equivalents. In the broader taxonomy, the AUIRFB8409 sits inside the power MOSFET family, which itself belongs to discrete semiconductors and ultimately to power management conversion. HEXFET refers to Infineon's (formerly International Rectifier) proprietary planar-trench cell architecture that achieves very low figure-of-mic on-resistance per unit silicon area, enabling the AUIRFB8409's 195A rating in a standard TO-220 outline.
Key features of the AUIRFB8409 include 40V drain-source breakdown, 195A continuous drain current at case temperature 25°C, an ultra-low maximum on-resistance of 1.2 mΩ, 375W maximum power dissipation, and 175°C maximum operating junction temperature. The through-hole TO-220AB package provides mechanical robustness and direct heatsink mounting, while the automotive-grade qualification enables deployment in 12V and 24V vehicle electrical systems without additional up-screening.
The AUIRFB8409 is optimized for high-current, low-frequency switching in which conduction loss dominates. The 0.97-1.2 mΩ on-resistance minimizes I²R losses at the 100-200A load levels typical of starter, alternator, and motor-drive circuits, while the 40V rating provides generous headroom above 12V/24V automotive bus transients. Compared with similarly rated TrenchFET or standard MOSFETs in TO-220, the HEXFET cell offers a favorable R<sub>DS(on)</sub>×Q<sub>g</sub> figure of merit for hard-switched topologies.
Typical applications include automotive brushed DC motor drives (window lift, seat adjust, wiper, fan), 12V/24V high-current solenoid switching, electric power steering (EPS) controllers, and battery-disconnect / reverse-polarity protection switches. The Infineon product page specifically lists motor drives as a primary use case. The device's high current rating also suits industrial solenoid drivers and high-current load switches in 24V industrial buses.
When designing with the AUIRFB8409, ensure the gate drive voltage is at least 10V to fully enhance the channel and achieve the rated R<sub>DS(on)</sub>. The TO-220AB package typically requires a thermal compound and clip-mounted or screw-mounted heatsink; at 195A conduction losses of P = I²R = (195)² × 0.001 ≈ 38W occur at full load, demanding substantial thermal management. Source-pin kelvin connection is recommended where very high di/dt switching occurs.
This page synthesizes drop-in alternatives, distributor pricing as of 2026-10-07, automotive-grade application notes, and practical thermal guidance that goes beyond what is found in the standalone Infineon datasheet.
드롭인 대체품: AUIRFB8409 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: AUIRFB8409 (동일 폼 팩터 및 풋프린트) — 차이점: Package, Technology.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IRFB8409
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
AUIRFB8407
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
IRFB4110PBF
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$1.55 / 개
데이터시트 보기 →AUIRFB8409 최대 정격 & 전기적 특성
| FET Type | N-Channel |
| Technology | HEXFET (planar-trench MOSFET) |
| Drain-Source Voltage (V<sub>DS</sub>) | 40 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | 195 A |
| R<sub>DS(on)</sub> max (V<sub>GS</sub>=10V) | 1.2 mΩ (Infineon page) / 0.97 mΩ (Mouser title) |
| Maximum Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) | 375 W |
| Maximum Junction Temperature | 175 °C |
| 동작 접합 온도 | -55 °C to +175 °C |
| 패키지 | TO-220AB (through-hole, 3 leads) |
| 실장 유형 | Through Hole |
| Qualification | Automotive Grade (AEC-Q101 family) |
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
AUIRFB8409 핀 구성
| 핀 1 | Gate — Gate control input; drive to >=10V for full enhancement |
| 핀 2 | Drain — Drain terminal; also electrically connected to the metal tab |
| 핀 3 | Source — Source terminal; reference for gate drive and Kelvin connection optional |
안전 동작 영역 (DC, T<sub>C</sub>=25°C)
일반적인 애플리케이션
AUIRFB8409 적합 용도: 6 애플리케이션s: Automotive Brushed DC Motor Drive, 12V/24V High-Current Solenoid Switching, Electric Power Steering (EPS) Controller, Battery Disconnect and Reverse-Polarity Protection, Industrial 24V Solenoid and Valve Driver, High-Current Load Switch in 24V Industrial Bus.
Automotive Brushed DC Motor Drive
The AUIRFB8409 is specifically listed by the manufacturer for automotive motor drive use cases. The 1.2 mΩ max R<sub>DS(on)</sub> at VGS=10V and 195A continuous drain current at Tc=25°C make it ideal for brushed DC motor half-bridge or low-side switch positions in 12V vehicle systems. The 175°C max junction temperature provides thermal headroom for sustained stall-current operation typical of seat adjust, window lift, and HVAC blower motors. AEC-Q101 automotive qualification ensures reliability under hood thermal cycling and vibration stress.
추천
12V/24V High-Current Solenoid Switching
The AUIRFB8409's 195A continuous drain current and 40V VDS rating suit high-current solenoid switching such as starter solenoid, transmission shift solenoid, and fuel injector drivers in 12V/24V vehicle electrical systems. The 375W max power dissipation at Tc=25°C provides thermal budget during the high inrush currents typical of solenoid energization. Automotive-grade qualification ensures dependable operation in the high-vibration under-hood environment.
추천
Electric Power Steering (EPS) Controller
In electric power steering systems, the AUIRFB8409 serves as a low-side switch or half-bridge element controlling the EPS brush motor that assists driver steering input. The 1.2 mΩ R<sub>DS(on)</sub> minimizes I²R conduction loss, helping the EPS ECU meet efficiency requirements during continuous assist operation. The 40V VDS rating handles 12V bus transients and load-dump events typical of vehicle electrical systems. Automotive qualification is mandatory for safety-critical EPS applications.
추천
Battery Disconnect and Reverse-Polarity Protection
The AUIRFB8409 can serve as the primary disconnect element in automotive battery management or reverse-polarity protection circuits where conventional mechanical relays have insufficient reliability. With 195A current capability and 1.2 mΩ R<sub>DS(on)</sub>, the AUIRFB8409 minimizes voltage drop during full-load battery discharge. The TO-220AB package enables direct heatsink mounting for continuous 100A+ operation during battery cycling. 40V VDS handles jump-start and load-dump transients.
추천
Industrial 24V Solenoid and Valve Driver
Beyond automotive, the AUIRFB8409 suits industrial 24V DC solenoid and proportional valve driver applications where high continuous current and low conduction loss are required. The 195A rating covers the inrush and hold currents of large industrial solenoids, while the 1.2 mΩ R<sub>DS(on)</sub> minimizes waste heat in panel-mounted equipment. The 40V VDS provides 16V headroom above 24V nominal, tolerating typical industrial bus transients.
추천
High-Current Load Switch in 24V Industrial Bus
The AUIRFB8409 can function as a high-side or low-side load switch in 24V industrial battery buses such as those found in material-handling equipment, forklifts, and AGVs. The 195A continuous rating covers motor and resistive heating loads, while the 40V VDS rating tolerates 24V bus transients during regen braking. The TO-220AB through-hole package supports rugged mechanical mounting required in industrial equipment, and AEC-Q101 testing exceeds typical commercial industrial stress requirements.
추천
추천 제품 요약
엔지니어링 참조 데이터: AUIRFB8409 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | AUIRFS8409-7P | IRFB8409 | AUIRFB8407 | IRFB4110 | NVMFS0DPAK3135 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi |
| Package | TO-220AB | D2PAK-7 (surface-mount) | TO-220AB (same) | TO-220AB (same) | TO-220AB (same) | DFN (surface-mount) |
| V<sub>DS</sub> max | 40 V | 40 V | 40 V | 40 V | 100 V | 40 V |
| Continuous I<sub>D</sub> (T<sub>C</sub>=25°C) | 195 A | 195 A (same die) | 195 A | 170 A | 180 A | 200 A |
| R<sub>DS(on)</sub> max (V<sub>GS</sub>=10V) | 1.2 mΩ | 1.2 mΩ (same die) | 1.2 mΩ | 2.0 mΩ | 3.7 mΩ | 1.0 mΩ |
| Max Junction Temperature | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C |
| Automotive Grade (AEC-Q101) | Yes (AU prefix) | Yes | No (commercial) | Yes | No (commercial) | Yes |
주요 차별점
- Automotive-grade qualification with same TO-220AB pinout (vs IRFB8409)
- Higher continuous drain current at same R<sub>DS(on)</sub> (vs AUIRFB8407)
- Higher current and lower R<sub>DS(on)</sub> than competitor 40V parts (vs NVMFS0DPAK3135)
설계 노트
Estimated thermal analysis: at I<sub>D</sub>=195A and R<sub>DS(on)</sub>=1.2 mΩ, conduction loss is approximately P = I²R = 195² × 0.0012 ≈ 45.6 W. The TO-220AB junction-to-case thermal resistance is typically 0.5 °C/W, so the junction-to-case temperature rise is approximately 45.6 × 0.5 = 22.8 °C above the case. At ambient 25°C, mounting the case to a heatsink with thermal resistance below 3 °C/W keeps the junction below 175°C maximum. Without a heatsink, the junction would exceed maximum rating within seconds at full load.
Critical pinout selection is required: the AUIRFB8409 TO-220AB pinout follows the JEDEC TO-220AB standard for N-channel MOSFETs (Gate-Drain-Source from left to right when viewing the front face with leads down). Some competing 40V TO-220 parts use different pin assignments. Verify pinout before PCB substitution. Also note the metal tab is electrically tied to the Drain, so the heatsink is at drain potential - use insulating thermal pads or mica washers if the heatsink is grounded.
PCB layout considerations for the AUIRFB8409 in high-current switching: minimize the source-lead inductance to limit voltage overshoot during turn-off. Use a gate-source resistor (typically 10-100 kΩ) to keep the gate below Vth during power-up and prevent accidental turn-on. For high-di/dt applications, place a small RC snubber (1-10 Ω + 1-10 nF) across drain-source to suppress ringing. Gate-drive traces should be kept short and routed away from drain switching nodes to avoid capacitive coupling that can cause dv/dt-induced turn-on.
규정 준수 정보
Automotive grade (AEC-Q101) per Infineon AUIR prefix convention; RoHS/REACH status not explicitly stated in provided data - marked unknown. Lead-free per modern Infineon manufacturing. Per Alldatasheet listing, the original datasheet is 14 pages.
