BAP64 - Silicon PIN Diode 3GHz RF Switch | NXP Semiconductors
부품 번호: BAP64 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $0.1 | $0.10 |
| 10 | $0.08 | $0.80 |
| 100 | $0.06 | $6.00 |
| 500 | $0.05 | $25.00 |
| 1,000 | $0.04 | $40.00 |
BAP64 개요
A PIN diode is a semiconductor device with a lightly doped intrinsic layer sandwiched between P-type and N-type regions. Under forward bias, stored carriers in the intrinsic region make the diode behave as a current-controlled resistor; under reverse bias it behaves as a small, nearly-lossless capacitor. This unique characteristic makes PIN diodes the preferred switching and variable-attenuation element in RF and microwave signal chains, sitting within the broader hierarchy of diodes, discrete semiconductors, and RF components.
Key features of the BAP64 family include operation to 3 GHz, low series resistance in forward conduction, low capacitance in the reverse-bias state for minimal insertion loss, and voltage ratings from 100V to 175V depending on the suffix. The SOT-23/TO-236AB package provides a compact footprint for high-density RF boards, and the BAP64-04W variant comes in the even smaller SC-70 package as a series-connected pair for T/R switch topologies.
Architecturally, the BAP64 die uses a silicon PIN structure engineered for fast carrier lifetime and controlled charge storage, so it switches cleanly at RF without generating the harmonic distortion typical of ordinary rectifier diodes. High reverse breakdown voltage allows use in antenna-line switching, PIN attenuator ladders, and protection circuits handling substantial RF power.
Typical applications include RF antenna switch modules, transmit/receive switching in wireless transceivers, RF attenuator networks in test equipment, and ESD/overvoltage clamping on antenna lines up to 3 GHz.
When designing with BAP64 diodes, always provide adequate forward bias current: series resistance falls with increased forward current, so attenuation accuracy and linearity depend directly on the bias network. Verify the suffix-specific breakdown voltage against your worst-case RF peak voltage.
This page synthesizes distributor pricing, drop-in alternatives, application guidance, and design notes not found in a single manufacturer datasheet.
드롭인 대체품: BAP64 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
BAP64-03
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
BAP64-06
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
BAP64-04W,115
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
BAP64-06-TP
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
BAP64-04W
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
BAP64 최대 정격 & 전기적 특성
| Device Type | Silicon PIN diode (RF switching / attenuator) |
| Maximum Operating Frequency | 3 GHz |
| Configuration (BAP64-02) | Single diode |
| Configuration (BAP64-04W) | 1 pair, series connection |
| Peak Reverse Voltage (BAP64-06) | 175 V |
| Peak Reverse Voltage (BAP64-04W) | 100 V |
| Continuous Forward Current (BAP64-04W) | 100 mA |
| Power Dissipation (BAP64-04W) | 240 mW |
| Package (BAP64-02/-06) | SOT-23 (TO-236AB), 3-pin |
| Package (BAP64-04W) | SC-70 (SOT-323) |
| 실장 유형 | Surface Mount |
| 동작 온도 | -55C to +150C |
| Packing (BAP64-02) | Reel 7 inch, 3000 units per reel |
| RoHS 상태 | Compliant |
BAP64 sc-70 (sot-323) 핀 구성 가이드
BAP64(sc-70 (sot-323) 패키지)의 핀 구성입니다. 이 전력 소자는 게이트, 드레인, 소스 단자를 갖추고 있습니다. 비편향 패키지의 경우 정확한 핀 1 방향과 풋프린트 세부 정보는 제조사 데이터시트를 참조하십시오. 일반적인 응용 분야로는 전원 공급 장치 설계, 모터 구동, 부하 스위칭이 있습니다.
다음에 대한 상세 핀아웃 데이터 없음: BAP64.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
BAP64 적합 용도: 6 애플리케이션s: RF Antenna Switching, Transmit/Receive (T/R) Switching, PIN Diode RF Attenuators, Antenna Line Protection and ESD Clamping, Test and Measurement Instrumentation, Wireless Infrastructure Radios.
RF Antenna Switching
The BAP64 excels as the switching element in antenna changeover and diversity-antenna circuits up to 3 GHz, where its low forward-biased series resistance minimizes insertion loss and its low reverse-biased capacitance preserves isolation between ports. In a typical single-pole double-throw antenna switch, series BAP64 diodes sit directly in the RF path with shunt diodes providing off-state isolation, all biased through high-value RF chokes and DC-blocking capacitors. The 100V-to-175V family voltage ratings give engineers headroom for large RF peak voltages on transmit lines, a common failure point for lower-voltage switching diodes.
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Transmit/Receive (T/R) Switching
In half-duplex transceivers, the BAP64 family provides the PIN diodes for transmit/receive switching where high RF power handling and fast switching are simultaneously required. The BAP64-04W's factory-integrated series pair (two diodes in series within one SC-70) halves component count and guarantees matched carrier-lifetime behavior between the two series elements, which improves switch linearity. The 240 mW dissipation rating and 100 mA forward current capacity cover the bias currents typical of medium-power T/R switches, while the -55C to +150C range suits outdoor radio units.
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PIN Diode RF Attenuators
The BAP64's current-controlled resistance characteristic makes it a natural element in bridged-T, Pi, and ladder RF attenuator networks operating to 3 GHz. By steering bias current through series and shunt diodes, a controller achieves continuously variable attenuation with good linearity because the silicon PIN structure stores charge uniformly in the intrinsic region. NXP's low series resistance specification keeps the minimum-loss state genuinely low, and the family's consistent die technology across suffixes means matched resistance-versus-current curves when multiple diodes share one attenuator stage.
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Antenna Line Protection and ESD Clamping
Because the BAP64-06 combines a 175V breakdown with low capacitance, it can be placed as a shunt clamp on antenna or RF front-end lines to divert large transient voltage excursions without measurably degrading the wanted 3 GHz signal in normal operation. In receive chains the diode stays at zero or reverse bias, presenting only its small junction capacitance to the signal path; during a surge it conducts and absorbs energy. This makes it useful ahead of low-noise amplifiers and mixers that would otherwise be damaged by transmit leakage or electrostatic discharge.
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Test and Measurement Instrumentation
RF test equipment such as signal generators, step attenuators, and automated test front-ends uses BAP64-class PIN diodes for electronic attenuation and signal-path switching from DC to 3 GHz. The diode's repeatability under controlled forward current gives predictable, calibratable attenuation steps, and its low distortion preserves signal fidelity for error-vector-magnitude-sensitive measurements. The industrial -55C to +150C operating range keeps bench instruments within specification across warm-up and environmental stress, while surface-mount SOT-23 and SC-70 packages support compact switched attenuator modules.
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Wireless Infrastructure Radios
Base-station and point-to-point microwave radio front-ends employ BAP64 PIN diodes in duplex switching and AGC attenuation stages. The combination of high reverse voltage rating (100V to 175V depending on suffix), low series resistance under bias, and 3 GHz capability covers common sub-3 GHz licensed bands. Designers value the family's availability from multiple sources - NXP factory reels plus MCC and JSCJ cross-brand equivalents - which mitigates the 99-week factory lead time reported for BAP64-02 and supports long-term infrastructure product roadmaps with dual-sourced BOMs.
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추천 제품 요약
엔지니어링 참조 데이터: BAP64 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | BAP64-03 | BAP64-06 | BAP64-04W,115 | BAP64-06-TP | BAP64-04W (JSCJ) |
|---|---|---|---|---|---|---|
| Package | SOT-23 (TO-236AB), 3-pin | SOT-23 (TO-236AB) - same | SOT-23 (TO-236AB) - same | SC-70 (SOT-323) | SOT-23 (TO-236AB) - same | SC-70 (SOT-323) |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | MCC (Diodes/ Micro Commercial) | Jiangsu Changjing (JSCJ) |
| Configuration | Single PIN diode | Single PIN diode | Single PIN diode (3-pin) | 1 pair, series connection | Single PIN diode | Series pair |
주요 차별점
- Higher reverse voltage for high-RF-swing nodes (vs BAP64-04W,115)
- Integrated series pair reduces component count (vs BAP64-02)
- Availability and cost via cross-brand sourcing (vs BAP64-02)
설계 노트
BAP64 series resistance falls with increasing forward bias current, so switch insertion loss and attenuator accuracy depend on a well-regulated bias current source, not just a resistor from a supply rail. Use a current source or tightly bypassed bias network, and keep the bias return path free of RF by using chokes or high-value resistors. Verify the resistance-versus-forward-current curve in the suffix-specific datasheet before finalizing attenuation calibration tables.
Place BAP64 diodes directly at the RF path with minimal stub length; SOT-23 lead inductance becomes significant approaching 3 GHz. Use grounded coplanar waveguide or microstrip with via stitching near the RF pads, and place DC-blocking capacitors (typically 100 pF to 1 nF depending on lowest band frequency) immediately adjacent. Keep bias chokes away from other inductors to avoid unwanted coupling into the bias line.
Two frequent mistakes: (1) substituting a single-diode suffix where the design expects the BAP64-04W integrated series pair, or vice versa - pinout and footprint differ; (2) undersizing the reverse-bias DC blocking so that RF peak voltage forward-biases the diode in the off state, destroying isolation. Verify the suffix voltage rating (100V for BAP64-04W, 175V for BAP64-06) against worst-case RF peak plus DC bias before releasing the design.
규정 준수 정보
BAP64 family is offered in RoHS-compliant lead-free SOT-23 and SC-70 packages per distributor listings; REACH and conflict-minerals status not stated in provided data.
