BGA7L1N6E6327XT - LTE Low Noise Amplifier 728-960MHz | Infineon
부품 번호: BGA7L1N6E6327XT ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $0.78 | $0.78 |
| 10 | $0.71 | $7.10 |
| 100 | $0.59 | $59.00 |
| 500 | $0.5 | $250.00 |
| 1,000 | $0.42 | $420.00 |
| 3,000 | $0.36 | $1,080.00 |
BGA7L1N6E6327XT 개요
A low noise amplifier (LNA) is a critical radio-frequency building block placed immediately after the antenna and the preselect filter that amplifies very weak signals while adding as little noise as possible. LNAs sit at the front of a receiver signal chain - antenna -> filter -> LNA -> mixer/baseband. They are characterized by their noise figure (NF), expressed in dB, which directly sets the overall receiver sensitivity floor. The BGA7L1N6 belongs to the LTE LNA family (LNA -> MMIC -> RF amplifier -> wireless front-end IC) and is targeted at cellular and IoT receive paths that demand both low power and high linearity in a tiny footprint.
Key features include 13.3 dB insertion power gain, 0.90 dB noise figure, 4.4 mA operating current, and a digital on/off control pin compatible with 1 V logic to support direct connection to modern baseband GPIO. The part supports external matching, includes an integrated power-down mode, and is qualified over the -40C to +85C operating range. Its bypass-mode-capable topology makes it well suited to time-division duplex (TDD) systems such as LTE Band 8, Band 12, Band 13 and Band 20 terminals.
Architecturally, the BGA7L1N6 uses Infineon's high-frequency Silicon Germanium (SiGe) heterojunction bipolar transistor process, which provides high transition frequency at low collector current, a key advantage for low-power RF gain stages. The single-stage design with on-chip bias and matching simplifies the BOM to a few external passives, simplifying PCB layout in densely populated RF modules.
Typical applications include smartphones, tablets, LTE-enabled IoT modules, cellular dongles, LTE small cells, and GNSS-protected LTE receivers operating in the 700-960 MHz region. Its miniature footprint enables integration inside the very tight antenna-modules of modern mobile devices.
When designing with this part, place it adjacent to the cellular filter and follow Infineon's recommended matching network values in the datasheet - even small deviations above a few hundred MHz can sharply degrade gain and noise figure. Bypass mode is engaged through the 1 V-compatible control pin; routing this pin to a baseband GPIO is the cleanest sequencing approach.
This page synthesizes distributor pricing from DigiKey and Mouser, drop-in alternatives inside the same TSNP-6-2 package, and application design notes that complement (rather than restate) the Infineon datasheet.
드롭인 대체품: BGA7L1N6E6327XT — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: BGA7L1N6E6327XT (동일 폼 팩터 및 풋프린트) — 차이점: Control Logic, Insertion Power Gain, Package.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
BGA7L1BN6E6327XTSA1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
BGA7L1N6E6327XTSA1
✅ 드롭인✓ 재고 있음
$0.42 / 개
데이터시트 보기 →BGA7L1BN6E6327XT
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
BGA7L1N6E6327XT 최대 정격 & 전기적 특성
| Type | Low Noise Amplifier (LNA) MMIC |
| Technology | Silicon Germanium (SiGe) |
| Frequency Range | 728 MHz to 960 MHz |
| Insertion Power Gain | 13.3 dB |
| Noise Figure (NF) | 0.90 dB |
| 공급 전압 | 1.5 V to 3.3 V |
| 공급 전류 | 4.4 mA (typical) |
| Control Logic | Digital on/off switch, 1 V logic level |
| 패키지 | TSNP-6-2 (leadless) |
| Package Footprint | 0.7 mm x 1.1 mm |
| 동작 온도 범위 | -40C to +85C |
| 실장 유형 | Surface Mount |
| 토폴로지 | Single-stage with on-chip matching and bypass |
| Application Band | LTE Band 8 / 12 / 13 / 20 (sub-1 GHz) |
| RoHS 상태 | Compliant |
BGA7L1N6E6327XT 핀 구성
| 핀 1 | RF_IN — RF input from antenna/filter; matches to 50 ohm |
| 핀 2 | GND — Ground pad / thermal pad |
| 핀 3 | VCC — Supply voltage (1.5 V to 3.3 V) |
| 핀 4 | ON/OFF — Digital on/off control, 1 V-compatible logic |
| 핀 5 | GND — Ground pad |
| 핀 6 | RF_OUT — LNA RF output to mixer / next stage |
일반적인 애플리케이션
BGA7L1N6E6327XT 적합 용도: 6 애플리케이션s: Smartphone LTE Front-End, IoT and LTE-M Cellular Modules, LTE Dongles and Customer-Premises Equipment, LTE Small-Cell Receivers, GNSS Co-Located LTE Modules, Industrial Wireless Sensors.
Smartphone LTE Front-End
The BGA7L1N6E6327XT's 0.90 dB noise figure and 13.3 dB insertion gain in the 728-960 MHz band are well matched to smartphone LTE Band 8/12/13/20 receive paths. Its 4.4 mA bias current eases thermal and battery-budget demands for always-on cellular monitoring. Placed between the antenna diplexer and the mixer, it directly improves cell-edge throughput; the 1 V-logic ON/OFF pin routes seamlessly to a baseband GPIO for sleep-mode current reduction.
추천
IoT and LTE-M Cellular Modules
For LTE-M and NB-IoT modules operating in sub-1 GHz LTE bands, the BGA7L1N6's 13.3 dB gain and 0.90 dB NF greatly improve weak-signal sensitivity - critical for metering, asset-tracking and remote-monitoring terminals. Its 0.7 x 1.1 mm TSNP-6-2 footprint accommodates the very dense PCBs of modern IoT modules, and the 1.5-3.3 V supply rail can be sourced directly from the module's coin-cell regulator. The part's 4.4 mA bias is consistent with long-battery-life duty-cycled operation.
추천
LTE Dongles and Customer-Premises Equipment
USB LTE dongles and customer-premises routers operating in the 728-960 MHz region benefit from the BGA7L1N6's small package and low current draw. The 1 V-logic ON/OFF pin can be driven directly by the modem's GPIO, allowing the entire receive chain to be put into sub-microampere shutdown when no LTE traffic is scheduled. External matching components are few and can be laid out in a tight pi/T network around the TSNP-6-2 footprint.
추천
LTE Small-Cell Receivers
In picocell and femtocell LTE receivers using sub-1 GHz bands for backhaul or rural coverage, the BGA7L1N6 contributes additional gain stage and noise-figure improvement before the main transceiver. Its 0.90 dB NF sets the receiver sensitivity floor for the entire small-cell link budget, while the 4.4 mA bias is negligible in mains-powered infrastructure. The leadless TSNP-6-2 package also enables miniature reference designs for distributed antenna systems.
추천
GNSS Co-Located LTE Modules
Where LTE shares a chassis with GNSS receivers (asset trackers, smartphones, automotive telematics), the BGA7L1N6's integrated bias network and small footprint let it sit next to the GNSS SAW filter without disturbing layout. Its sub-1 GHz bandpass response rejects out-of-band cellular blockers, and the 1 V-logic on/off pin can be sequenced to disable the LNA during high-power GNSS transmission. This minimizes de-sense in co-located GNSS reception.
추천
Industrial Wireless Sensors
Industrial wireless sensors operating in sub-1 GHz LTE bands use the BGA7L1N6 to push receiver sensitivity to roughly -106 dBm, enabling extended outdoor link budgets. The 0.7 x 1.1 mm TSNP-6-2 package is small enough for sensor PCBs sharing space with a battery holder and an antenna. The -40C to +85C operating range is adequate for indoor industrial environments but does not cover the full -40C to +125C automotive range.
추천
추천 제품 요약
엔지니어링 참조 데이터: BGA7L1N6E6327XT — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | BGA7L1BN6E6327XTSA1 | BGA7L1N6E6327XTSA1 | BGA7L1BN6E6327XT |
|---|---|---|---|---|
| Package | TSNP-6-2 | TSNP-6-2 - same | TSNP-6-2 - same | TSNP-6-2 - same |
| Brand | Infineon | Infineon | Infineon | Infineon |
| Frequency Range | 728-960 MHz | 716-960 MHz | 728-960 MHz | 716-960 MHz |
| Noise Figure | 0.90 dB | 0.75 dB | 0.90 dB | 0.75 dB |
| Insertion Gain | 13.3 dB | 13.6 dB | 13.3 dB | 13.6 dB |
| Supply Current (typ) | 4.4 mA | ~4.5 mA | 4.4 mA | ~4.5 mA |
| Supply Voltage | 1.5-3.3 V | 1.5-3.3 V | 1.5-3.3 V | 1.5-3.3 V |
| Bypass / Gain Mode | No (single-stage only) | Yes - single-line two-state | No (single-stage only) | Yes - single-line two-state |
주요 차별점
- Industry-leading low noise figure in a sub-1mm footprint (vs BGA7L1BN6E6327XTSA1)
- Smallest LTE LNA footprint in Infineon's portfolio (vs BGA7L1BN6E6327XTSA1)
- 1 V-logic ON/OFF control eliminates level shifter (vs BGA7L1BN6E6327XTSA1)
설계 노트
Place the BGA7L1N6 adjacent to the cellular SAW/duplexer filter with controlled-impedance 50-ohm traces on the top RF layer and a continuous ground pour on layer 2. The TSNP-6-2 package's exposed central pads must be reflow-soldered to multiple thermal vias to a ground plane. Decoupling the Vcc pin with a 10 nF X7R bypass capacitor placed within 1 mm is mandatory for stable gain and low NF.
Do not route digital switching signals (USB, SIM clock, DC-DC converter edges) directly under the RF trace paths - they will couple into the LNA through the substrate and degrade NF by several tenths of a dB. The 1 V-logic ON/OFF pin should be pulled down through a 100 kohm resistor when not driven, to avoid indeterminate gain state at startup.
Use the external input/output matching network values from the Infineon datasheet closely - even small deviations can move the gain peak outside the 728-960 MHz band and drop realized NF by 0.3-0.5 dB. Estimated: keeping the input matching inductor Q above 30 at 800 MHz preserves the 13.3 dB headline gain figure shown in the datasheet. Always validate the match with a vector network analyzer on the production PCB stack-up.
Although the LNA dissipates less than 15 mW, the tiny TSNP-6-2 package relies entirely on the PCB copper pour for heat removal. Provide at least 5 square millimeters of uninterrupted ground copper around the device footprint, stitched with 0.5 mm-spaced vias. This avoids any risk of hot-spot-related drift during sustained 4.4 mA bias operation in confined IoT enclosures.
규정 준수 정보
RoHS and lead-free per Infineon product page. Not AEC-Q100 qualified; automotive LTE designs require the automotive-graded part variant. Halogen-free status not stated explicitly in the supplied data.
